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MACOM has recently expanded its RF portfolio with the introduction of Gallium Nitride on Silicon (GaN-on-Si) Low Noise Amplifiers (LNAs) — a development that reflects ongoing efforts to enhance receiver frontend performance in demanding environments.

Improved Power Handling Without Sacrificing Sensitivity
One of the key advantages of GaN-on-Si LNAs is their ability to tolerate higher input power levels compared to LNAs based on GaAs pHEMT or InP HEMT technologies. This characteristic can help improve the robustness of receiver front ends, potentially reducing the need for input limiters that may otherwise degrade system sensitivity.

By supporting higher power levels, GaN-on-Si LNAs offer a practical solution for applications where signal integrity and resilience are important design considerations.

Addressing Gain Recovery Challenges
Another area where GaN-on-Si LNAs show promise is in gain recovery performance. When an amplifier is exposed to a high-power, saturating signal, its gain typically drops—a phenomenon that can temporarily impair receiver functionality. The time it takes for the amplifier to return to its normal operating state is known as gain or pulse recovery.

This parameter is particularly relevant in systems such as radar or SATCOM, where intermittent high-power signals or interference may occur. MACOM’s GaN-on-Si LNAs demonstrate relatively fast recovery times, which may help reduce system downtime and improve overall responsiveness.

For example:

• The MAAL-011250, an X-Band LNA, recovers from a 30 dBm input pulse in approximately 20 nanoseconds.
• In contrast, some GaN-on-SiC LNAs may require over 10 microseconds to achieve similar recovery.

Comparable performance has also been observed in the MAAL-011251, a Ka-Band GaN-on-Si LNA.

MACOM’s GaN-on-Si LNAs offer a combination of enhanced power handling and competitive gain recovery performance, making them a viable option for engineers seeking to improve the resilience and responsiveness of RF front ends. As system requirements continue to evolve, these devices provide a useful addition to the toolbox of RF designers working in complex and interference-prone environments.