The MSW2010-201, MSW2011-201, series of surface mount silicon PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to 4 GHz respectively, in proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated within a ceramic substrate. These low profile, compact, surface mount components, (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large signal performance superior to that of MMIC devices in QFN packages. The SP2T switches are designed in an asymmetrical topology to minimize Tx-Ant loss and maximize Tx-Rx isolation performance. The very low thermal resistance (< 10ºC/W ) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 53 dBm in cold switching applications at TA = 85ºC. The thick I layers of the PIN diodes, coupled with their long minority carrier lifetime, provides input third order intercept point (IIP3) greater than 60 dBm.