GTRB266502FC-V1
High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
The GTRB266502FC is a 630-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi- standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB266502FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
- Min Frequency (MHz)
- 2620
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 630
- Gain(dB)
- 14.0
- Efficiency(%)
- 49
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2690 MHz, 48V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 630 W
- Efficiency at P3dB = 67%