X-Band

MACOM’s GaN-on-SiC products are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), MACOM’s products support continuous improvements in SWAP-C benchmarks. The performance demonstrated by many of these devices support the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems. And, MACOM’s versatile packaging capabilities provide several options for customers to implement these products into various types of systems, while managing critical factors such as thermals.

Part Number Description
CMPA851A050 8.5 - 10.5 GHz GaN MMIC HPA
CGHV1J070D-GP4 70 W; 18.0 GHz; GaN HEMT Die
CMPA851A025 8.5 - 10.5 GHz, 40 W GaN MMIC HPA
CMPA901A020 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier
CGHV1F025 25 W; DC - 15 GHz; 40 V; GaN HEMT
CGHV1A250 8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
CMPA901A035 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers
WSM5100S 8.5 - 10.5 GHz, 16W GaN T/R Module
CMPA851A012 8.5 - 10.5 GHz, 20 W GaN MMIC HPA
CMPA9396025 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier
CGHV96130F 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications
CMPA601C025 25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
CGHV96050F2 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT
CGHV1J006D-GP4 6 W; 18.0 GHz; GaN HEMT Die
CMPA801B030 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier
CGHV1J025D-GP4 25 W; 18.0 GHz; GaN HEMT Die
CMPA851A005S 8.5 - 10.5 GHz, 4.5W GaN MMIC HPA
CGHV1F006 6 W; DC - 15.0 GHz; 40 V; GaN HEMT
CGHV96100 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier