Communications Infrastructure

MACOM offers an extensive portfolio of GaN-on-SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G expands and matures, MACOM continues to expand and explore the advantages inherent in wide bandgap GaN-on-SiC for designers and developers seeking better performance everywhere.

Part Number Description
GTRA214602FC High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
GTRA263902FC-V2 High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
GTRA184602FC-V1 High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz
GTRA262802FC High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
GTRA364002FC High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
GTRA412852FC-V1 High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
GTRB097152FC High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz
GTRA374902FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
GTRA384802FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
GTRB384608FC-V1 High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz
GTRB246608FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz
GTRB267008FC-V1 High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
GTRA362802FC-V1 High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
GTRB204402FC High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz
GTRB264318FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
GTRB266502FC-V1 High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
GTRB206002FC High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
GTRB224402FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz
PTMC210404MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz
GTRB226002FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz
GTRA362002FC-V1 High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
GTRB186002FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
GTVA212701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
GTRB266908FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz
GTVA262711FA High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz
GTRB424908FC High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz
GTVA220701FA High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
PXAD184218FV-V1 High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz
PTRA094808NF-V1 High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz
GTVA261701FA-V1 High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
GTVA263202FC-V1 High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz
PTVA082407NF High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz
PTGA090304MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz
PTRA082808NF-V1 High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz
PTRA083818NF-V1 High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz
PTVA092407NF-V2 High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz
PTRA095908NB-V1 High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
PTRA087008NB-V1 High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz
WS1A2639-V1-R3K 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
WS1A3940-V1-R3K 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz
PTRA084858NF-V1 High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz
PXFC191507FC-V1 High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
PTRA097008NB-V1 High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
PTVA084007NF High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz
PTRA093818NF-V1 High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz
WS1A3640 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
PXAD214218FV-V1 High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz
PXAE183708NB High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz
PTNC210604MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz
GTVA261802FC-V1 High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
PXAE261908NF-V1 High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz
PTRA097058NB-V1 High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
GTVA262701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
WSGPA01-V1-R3K 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
PXAE263708NB-V1 High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz
PTRA084808NF-V1 High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz
PXAE213708NB High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
GTRB184402FC High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz
PTVA12025 High Power RF LDMOS FET 25 W; 500 - 1400 MHz
CGH09120F 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM