General Purpose Broadband 28 V

MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications that require high reliability and efficiency. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family  consists of packaged, unmatched discrete transistors from output powers 6 W to 240 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers operating at 28 V suitable from DC – 18 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

Part Number Description
CMPA2060035 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
CGH40120 120 W RF Power GaN HEMT
CMPA601C025 40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
CGH40025 25 W RF Power GaN HEMT
CGHV35060MP 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations
CGH35015 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX
CGH21240 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
CMPA2560025 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier
WST4200D GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
CMPA2060040D1 GaN High Power Amplifier, 40 W 2.0 -6.0 GHz
CGH40090 90 W RF Power GaN HEMT
CMPA1842040 1.8 - 4.2 GHz, 45 W GaN MMIC HPA
CGH40180 180 W RF Power GaN HEMT
CGH40006 6 W RF Power GaN HEMT
WST4500D GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz
CG2H80030D-GP4 30 W; 8.0 GHz; GaN HEMT Die
CG2H40035 35 W RF Power GaN HEMT
CGH40010 10 W RF Power GaN HEMT
CGH27030 30 W, DC - 6.0 GHz, 28 V, GaN HEMT
CMPA0560008 MMIC Power Amplifier, 10 W, 0.5 - 6 GHz
CMPA2735075 75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier
WST4050D GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz
CMPA0760020 0.7 - 6.0 GHz, 25W GaN MMIC HPA
CGH35060P1 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX
CG2H40025 25 W RF Power GaN HEMT
CG2H80015D-GP4 15 W; 8.0 GHz ; GaN HEMT Die
CGH25120F 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE
CGH60060D-GP4 60 W; 6.0 GHz; GaN HEMT Die
WST4100D GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz
CGH55030 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX
CG2H80060D-GP4 60 W; 8.0 GHz; GaN HEMT Die
CGH27015P 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
CGH60008D-GP4 8 W; 6.0 GHz; GaN HEMT Die
CGH27060F 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
CGH27015 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz
CGH60030D-GP4 30 W; 6.0 GHz; GaN HEMT Die
CGH40045 45 W RF Power GaN HEMT
CGH60120D-GP4 120 W; 6.0 GHz; GaN HEMT Die
CMPA601J025 6 - 18 GHz, 25W GaN MMIC HPA
CG2H40120 120 W; RF Power GaN HEMT
WST41H0D GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz
CGH40035 35 W RF Power GaN HEMT
CG2H40010 10 W RF Power GaN HEMT
WST4300D GaN-on-SiC Transistor, 45 W, 28 V, DC - 6 GHz
CGH60015D-GP4 15 W; 6.0 GHz; GaN HEMT Die
CMPA0060002 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier
CG2H40045 45 W RF Power GaN HEMT
CG2H80045D-GP4 45 W, 8.0 GHz, GaN HEMT Die
CG2H80120D-GP4 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die
CMPA0530002 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications