Product Detail

GaN Amplifier 28 V, 4 W, DC - 6 GHz

 The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications. The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.  

  • GaN on Si HEMT D-Mode Amplifier
  • Suitable for Linear & Saturated Applications
  • 28V Operation
  • Tunable from DC - 6 GHz
  • 9 dB Gain @ 5.8 GHz
  • 45% Drain Efficiency @ 5.8 GHz
  • 100% RF Tested
  • Thermally-Enhanced 4 mm 24-Lead QFN
  • RoHS* Compliant
  • Aerospace and Defense
  • Defense Communications
  • High Dynamic Range LNA's
  • ISM
  • Wireless Infrastructure
  • Wireless LAN
  • Supply Voltage: 28 V
  • PSAT: 4 W
  • Gain: 9 dB
  • Test Freq: 5.8 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 6,000 MHz
  • Theta J-C: 17 C/W
  • 4x4 mm
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
GaN Amplifier 28 V, 4 W, DC - 6 GHz
4x4 mm Inquire

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