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Packaged HFET
The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of P1dB and OIP3 of more than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain.
Features
- 46.5 dBm OIP3 @ 5.8 GHz
- SOT-89 Package
- 30.0 dBm P1dB
- 10.0 dB Gain @ 6 GHz
- 15.5 dB Gain @ 2 GHz
Applications
- Aerospace and Defense
- Wireless Networking and Communication
Specifications
- Min Frequency: 0 MHz
- Max Frequency: 6,000 MHz
- Gain: 15.5 dB
- OIP3: 46.5 dBm
- Output P1dB: 30 dBm
- Bias Voltage: 8 V
- Bias Current: 300 mA
Datasheet
Model Data (Sparameters)
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- M513 - Tape and Reel Packaging for Surface Mount Components
- M538 - Surfacing Mounting Instructions - Footprint Guidelines
- S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
Package
- SOT-89
Package Category
- Plastic Surface Mount
ROHS
- Yes
Contact Info
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