XF1001-SC

Packaged HFET

The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of P1dB and OIP3 of more than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain.

Product Specifications

Part Number
XF1001-SC
Short Description
10DC-6.0 GHz1.0W Packaged HFETPage
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Gain(dB)
15.5
OIP3(dBm)
46.5
Output P1dB(dBm)
30.00
Package
SOT-89
Package Category
Plastic Surface Mount
ROHS
Yes

Features

  • 46.5 dBm OIP3 @ 5.8 GHz
  • SOT-89 Package
  • 30.0 dBm P1dB
  • 10.0 dB Gain @ 6 GHz
  • 15.5 dB Gain @ 2 GHz

Applications

  • Aerospace and Defense
  • Wireless Networking and Communication

Order from MACOM

XF1001-SC-EV1
Eval Module,XF1001-SC-0G00,5800MH
XF1001-SC-EV1 Distributors
XF1001-SC-EV2
EVAL MOD,XF1001-SC-0G00, 1900MHz
XF1001-SC-EV3
EVAL MOD,XF1001-SC-0G00, 4000MHz
XF1001-SC-EV3 Distributors