2007/10/15 |
MAPR-001090-350S00
|
Buy
|
Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10µs Pulse, 1% Duty
|
1025
|
1150
|
50
|
350
|
9
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPR-001090-350S00.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Gold Metallizsation System
Diffused emitter ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Confirguration
Hermetic Metal/cCeramic Package
Internal Input and Output Impedance Matching
RoHS Compliant
|
MAPR-001090-350S00_355E-01 Style 1 Ceramic.JPG
|
|
|
2007/08/15 |
MAPR-001011-850S00
|
Inquire
|
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10µs Pulse, 1% Duty
|
1025
|
1150
|
50
|
850
|
7.8
|
42
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPR-001011-850S00.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Diffused Emitter ballasting resistors
High efficiency Inter-Digitized Geometry
Broadband Class C operation
Common Base Configuration
Hermetic Metal/ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
RoHS Compliant
|
MAPR-00xxxx.jpg
|
|
|
2007/02/01 |
MAPR-000912-500S00
|
Buy
|
Avionics Pulsed Power Transistor 500W, 960-1215 MHz, 10µs Pulse, 10% Duty
|
960
|
1215
|
50
|
500
|
9
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPR-000912-500S00.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistor
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
RoHS compliant
|
MAPR-00xxxx.jpg
|
|
|
2006/12/10 |
MAPR-002729-170M00
|
Buy
|
Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
|
2700
|
2900
|
36
|
170
|
8.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPR-002729-170M00.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
|
MAPR-002729-170M00.JPG
|
|
|
2006/12/09 |
MAPRST0912-50
|
Buy
|
Avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10µs Pulse, 10% Duty
|
960
|
1215
|
50
|
50
|
9.1
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPRST0912-50.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Gold Metallization System
Diffused Emitter Ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Out Impedance Matching
|
MAPRST0912-50.JPG
|
|
|
2006/09/30 |
MAPRST0912-350
|
Buy
|
Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty
|
960
|
1215
|
50
|
350
|
9.4
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPRST0912-350.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
|
MAPRST0912-350.JPG
|
|
|
2006/01/30 |
MAPRST1030-1KS
|
Buy
|
Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10µs Pulse, 1% Duty
|
1030
|
1030
|
50
|
1000
|
8
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MAPRST1030-1KS.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Diffused Emitter Ballasting Resistor
High efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
RoHS Compliant
|
MAPRST1030-1KS.JPG
|
|
|
2004/12/27 |
MRF428
|
Buy
|
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
|
1
|
30
|
50
|
150
|
13
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF428.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 DB, Efficiency = 45%
Intermodulation distortion @ 150 W (PEP): IMD = -30 db (max.)
100% Tested Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW
|
MRF428-CASE-211-07-STYLE-1.JPG
|
|
|
2003/05/30 |
PHA2729-300M
|
Inquire
|
1 Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100µs Pulse, 10%Duty
|
2700
|
2900
|
38
|
300
|
7.5
|
36
|
Module
|
Pallet
|
Pallet
|
PHA2729-300M.pdf
|
No
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Includes RC Bias circuit
MTTF > 1x106 hrs @ Tflange=45 °C
Nickel Plated Copper Flange
Soft substrate eR=10.5
Input and output matched to 50 W
In-Phase combined pulsed power transistors
|
PHA2729-300M.JPG
|
10
|
100
|
2003/03/17 |
PH3134-55L
|
Buy
|
Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
|
3100
|
3400
|
36
|
55
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3134-55L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH3134-55L.JPG
|
|
|
2003/01/29 |
MRF176GU
|
Buy
|
The RF MOSFET Line 200/150W, 500MHz, 50V
|
5
|
400
|
50
|
150
|
12
|
45
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF176GU.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 7.0 pF Typ @ VDS = 50 V
Low Thermal Resistance
100% Ruggedness Tested at Rated Output Power
|
MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
|
|
|
2002/10/21 |
MRF151A
|
Buy
|
MOSFET
|
5
|
175
|
|
150
|
13
|
40
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF151A.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4001 - 300 Watt Class E Amplifier Using MRF151A
|
Enhanced Thermal Performance
Higher Power Dissipation
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%
Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability
|
MRF151A - Case P.JPG
|
|
|
2002/06/09 |
PH3134-20L
|
Inquire
|
Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
|
3100
|
3400
|
36
|
20
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3134-20L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
Broadband Class C Operation
Common Base Configuration
|
PH3134-20L.JPG
|
|
|
2001/12/24 |
PH1214-300M
|
Buy
|
Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
40
|
300
|
8.75
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-300M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
|
PH1214-300M.JPG
|
|
|
2001/10/24 |
MRF1004MB
|
Buy
|
Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
|
960
|
1215
|
35
|
4
|
10
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF1004MB.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 W Peak
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Minimum Gain = 10 dB
Internal Input Matching for Broadband Operation
|
MRF1004MB-CASE-332A-03-STYLE-1.JPG
|
|
|
2001/10/24 |
MRF175LU
|
Buy
|
The RF MOSFET Line 100W, 400MHz, 28V
|
5
|
400
|
28
|
100
|
8
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF175LU.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 20 pF Typ @ VDS = 28 V
Low Thermal Resistance
100% Rruggedness Tested at Rated Output Power
|
MRF175LU-CASE-333-04-STYLE-2.JPG
|
|
|
2001/10/24 |
MRF176GV
|
Buy
|
The RF MOSFET Line 200/150W, 500MHz, 50V
|
5
|
225
|
50
|
200
|
15
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF176GU.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 7.0 pF Typ @ VDS = 50 V
Low Thermal Resistance
100% Ruggedness Tested at Rate Output Power
|
MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
|
|
|
2001/09/29 |
MRF140
|
Buy
|
The RF MOSFET Line 30W, to 400MHz, 28V
|
5
|
150
|
28
|
150
|
15
|
40
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF140.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode
IMD(d11) (150 W PEP): –60 dB (Typ.)
Superior High Order IMD
Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)
100%Test for Load Mismatch at all Phase with 30:1 VSWR
IMD(d3) (150 W PEP): –30 dB (Typ.)
|
MRF140 - Case 211-11 Style 2.JPG
|
|
|
2001/10/14 |
MRF321
|
Buy
|
The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
|
200
|
500
|
28
|
10
|
12
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF321.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Computer–controlled wirebonding gives consistent input Impedance
Gold Metallization System for High Reliability
|
MRF-321-CASE-244-04-STYLE-1.JPG
|
|
|
2001/10/26 |
2N6439
|
Buy
|
The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
|
225
|
400
|
28
|
60
|
7.8
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
2N6439.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz
Gold Metallization System for High Reliability Application
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Built–In Matching Network for Broadband Operation using Double Match Technique
|
2N6439 - Case 316 -.JPG
|
|
|
2001/09/20 |
MRF421
|
Buy
|
The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
|
2
|
30
|
12.5
|
100
|
10
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF421.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 12.5 V, 30 MHz characteristics: Output Power= 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%
Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (min.)
100% Tested for Load Mismatch at all Phase Angelswith 30:1 VSWR
|
MRF421-CASE-211-11-STYLE-1.JPG
|
|
|
2001/09/20 |
MRF429
|
Buy
|
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
|
2
|
30
|
50
|
150
|
13
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF429.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45%
Diffused emitter resistors for superior ruggedness
Intermodulation distortion @ 150 W (PEP): IMD = –32 dB (Max)
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW
|
|
|
|
2001/09/20 |
MRF175GU
|
Buy
|
The RF MOSFET Line 200/150W, 500MHz, 28V
|
5
|
400
|
28
|
150
|
12
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF175GU.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)
100% RuggednessTested at a Rated output Power
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Low Crss — 20 pF typ @ VDS = 28 V
Low Thermal Resistance
|
MRF175GU - Case 375-04 Style 2.JPG
|
|
|
2001/09/09 |
MRF148A
|
Buy
|
Linear RF Power MOSFET 30W, to 175MHz, 50V
|
5
|
175
|
50
|
30
|
18
|
40
|
TMOS
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF148A.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)
100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR
Lower Reverse Transfer Capacitance (3.0 pF typ.)
Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40% (Typ.)
|
MRF148A - Case 211-07, Style 2.JPG
|
|
|
2001/09/15 |
MRF173CQ
|
Buy
|
The RF MOSFET Line 80W, 175MHz, 28V
|
5
|
175
|
28
|
80
|
11
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF173CQ.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability; Suited for Class A Operation
Low Noise Figure— 1.5 dB (Typ.) at 2.0 A, 150 MHz
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance
Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% Min. (60% Typ.)
|
MRF173CQ - Case 316-01 Style 2.JPG
|
|
|
2001/09/20 |
PH1214-55EL
|
Buy
|
Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty
|
1200
|
1400
|
28
|
55
|
6.6
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-55EL.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-55EL.JPG
|
|
|
2001/09/17 |
MRF141
|
Buy
|
RF Power MOSFET 150W, to 175MHz, 28V
|
5
|
175
|
28
|
150
|
18
|
40
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF141.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
Low Thermal Resistance
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
|
MRF141- Case 211-11 Style 2.JPG
|
|
|
2001/09/12 |
MRF422
|
Buy
|
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
|
2
|
30
|
28
|
150
|
10
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF422.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%, Minimum Gain = 10 dB
Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)
100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR
|
MRF422-CASE-211-11-STYLE-1.JPG
|
|
|
2001/09/18 |
MRF313
|
Buy
|
The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
|
400
|
400
|
28
|
1
|
15
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF313.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
|
Specified 28 V, 400 MHz Characteristics: Output Power = 1.0 W, Power Gain = 15 dB min.,Efficiency = 45% (Typ.)
Emitter Ballast and Low Current Destiny for Improved MTBF
Common Emitter for Improved Stability
|
MRF313 - Case 305-01 Style 2.JPG
|
|
|
2001/09/23 |
MRF323
|
Buy
|
The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
|
200
|
500
|
28
|
20
|
10
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF323.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.
Gold Metallization System for High Reliability
100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR •
Computer Controlled Wirebonding Gives Consistent Input Impedance
|
MRF-323-CASE-244-04-STYLE-1.JPG
|
|
|
2001/09/09 |
MRF136Y
|
Buy
|
The RF MOSFET Line 30W, to 400MHz, 28V
|
5
|
400
|
28
|
30
|
12
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF136Y.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode
100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Small and Large Signal characterization
Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.)
Facilitates Manual Gain Control ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Space Saving Package for Push–:Pull Circuit Applications
|
MRF136Y - Case 319 B-02 Style 1.JPG
|
|
|
2001/09/05 |
MRF174
|
Buy
|
The RF MOSFET Line 125W, 200MHz
|
5
|
200
|
|
125
|
9
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF174.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability; ideally Suite for Class A Operations
Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)
Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz
|
MRF174- Case 211-02 Style 2.JPG
|
|
|
2001/09/08 |
MRF327
|
Buy
|
NPN, Power Transistor 80W, 100 to 500MHz, 28V
|
100
|
500
|
28
|
80
|
7.3
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF327.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz
Characterized for 100 =8 500 MHz
Gold Metallization System for High Reliability applications
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Built–In Matching Network for Broadband Operation using Double Match Technique
|
MRF327-CASE-316-01-STYLE-1.JPG
|
|
|
2001/09/06 |
MRF158
|
Buy
|
The Broadband RF MOSFET Line 2W, 500MHz, 28V
|
5
|
500
|
28
|
2
|
16
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF158.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel enhancement mode
Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR
Excellent Thermal Stability Ideally Suited for Class A Operation
|
MRF158 - Case 305-01 Style 2.JPG
|
|
|
2001/08/29 |
MRF173
|
Buy
|
The RF MOSFET Line 80W, 175MHz, 28V
|
5
|
175
|
28
|
80
|
11
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF173.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Low Thermal Resistance
Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Excellent Thermal Stability, Suite for Class A Operation
Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz
|
MRF173- Case 211-11 Style 2.JPG
|
|
|
2001/09/04 |
MRF175GV
|
Buy
|
The RF MOSFET Line 200/150W, 500MHz, 28V
|
5
|
225
|
28
|
200
|
14
|
65
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF175GU.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Low Crss — 20 pF typ @ VDS = 28 V
Low Thermal Resistance
100% Ruggedness Test at Rate Output Power
Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ
|
MRF175GU - MRF175GV Case 375-04 Style 2.JPG
|
|
|
2001/08/31 |
MRF177
|
Buy
|
The RF MOSFET Line 100W, 400MHz, 28V
|
5
|
400
|
28
|
100
|
12
|
60
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF177.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability; Suited for Class A Operation
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Crss — 10 pF typ. @ VDS = 28 V
Low Thermal Resistance
Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
|
MRF177-CASE-744A-01-STYLE-2.JPG
|
|
|
2001/08/23 |
MRF455
|
Buy
|
The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V
|
2
|
30
|
12.5
|
60
|
13
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF455.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 12.5 V, 30 MHz Characteristics:
Efficiency = 55%
Minimum Gain = 13 dB
Output Power = 60 W
|
MRF455 - Case 211-07 Style 1.JPG
|
|
|
2001/08/25 |
MRF316
|
Buy
|
The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V
|
30
|
200
|
28
|
80
|
10
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF316.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed performance at 150 MHz, 28 Vdc: Output Power = 80 W, Minimum Gain = 10 dB
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Built–in Matching Network for Broadband Operation
Gold Metallization System for High Reliability Applications
|
MRF316 -Case 316.JPG
|
|
|
2001/08/27 |
MRF426
|
Buy
|
1 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
|
2
|
30
|
28
|
25
|
22
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF426.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35%
Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max)
Class A and AB Characterization
100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR
BLX 13 Equivalent
|
MRF426-CASE-211-11-STYLE-1.JPG
|
|
|
2001/08/23 |
MRF392
|
Buy
|
NPN, Power Transistor 80W, 100 to 500MHz, 28V
|
100
|
400
|
28
|
125
|
10
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF392.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 28 V, 400 MHz characteristics: Output Power = 125 W, Typical Gain = 10 dB, Efficiency = 55% (Typ.)
Gold Metallization System for High Reliability
Push–Pull Configuration Reduces Even Numbered Harmonics
Built–Input Impedance Matching Networks for Broadband Operations
100% Tested for Load Mismatch
|
MRF392-CASE-744A-01-STYLE-2.JPG
|
|
|
2001/08/25 |
MRF10031
|
Buy
|
Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V
|
960
|
1215
|
36
|
30
|
9
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF10031.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance@ 960-1215MHz, 36Vdc
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
Hermetically sealed, industry standard package
100%Tesdted for Load Mismatch all Phase Angles with 10:1 VSWR
Minimum Gain: 9.0dB min., 9.5dB typ.
Output Power: 30W peak
Internal Input Matching for Broadband Operation
|
MRF10031-CASE-332A-03-STYLE-2.JPG
|
|
|
2001/08/27 |
MRF454
|
Buy
|
The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V
|
2
|
30
|
12.5
|
80
|
12
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF454.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 12.5 V, 30 MHz characteristics:
Efficiency = 50%
Minimum gain = 12 dB
Output power = 80 W
|
MRF454-CASE-211-11-STYLE-1.JPG
|
|
|
2001/08/23 |
MRF10005
|
Buy
|
Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V
|
960
|
1215
|
28
|
5
|
8.5
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF10005.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @1.215GHz, 28Vdc
Hermetically Sealed Industry Standard Package
100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
RF Performance Curves for 28 Vdc and 36 Vdc Operation
Minimum Gain = 8.5dB, 10.3dB (Typ.)
Output Power: 5.0W CW
Internal Input Matching for Broadband Operation
Gold Metallized, Emitter Ballasted for Long Life and Rresistance to Metal Migration
Silicon Nitride Passivated
|
MRF10005-CASE-336E-02-STYLE-1.JPG
|
|
|
2001/08/27 |
MRF393
|
Buy
|
NPN, Power Transistor 100W, 30 to 500MHz, 28V
|
30
|
500
|
28
|
100
|
9.5
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF393.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)
Gold Metallization System for High Reliability
Push–Pull Configuration Reduces Even Numbered Harmonics
Built–In Input Impedance Matching Networks for Broad Operatons
100% Test for Load Mismatch
|
MRF393-CASE-744A-01-STYLE-2.JPG
|
|
|
2001/08/23 |
MRF314
|
Buy
|
The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V
|
30
|
200
|
28
|
30
|
10
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF314.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
Gold Metallization System for High Reliability Applications
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
|
MRF314 - Case 211-07 Style 1.JPG
|
|
|
2001/08/16 |
MRF317
|
Buy
|
The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V
|
30
|
200
|
28
|
100
|
9
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF317.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 150 MHz, 28 Vdc: Output Power = 100 W, Minimum Gain = 9.0 dB
Gold Metallization System for High Reliability Applications
100% Test for Load at all Phase Angels with 30:1 VSWR
Built–in matching network for broadband operation
Guaranteed Performance in Broadband Test Fixture
Peak AM Amplifier Service
High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W
|
MRF317 -Case 316.JPG
|
|
|
2001/08/22 |
MRF10120
|
Buy
|
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
|
960
|
1215
|
36
|
120
|
8
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF10120.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1.215 GHz, 36 Vdc
Silicon Nitride Passivated
Hermetically Sealer Industry Standard Package
100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR
Gain = 7.6 dB min., 8 .5 dB (typ.)
Output Power = 120 W Peak
Internal Input and Output Matching for Broadband Operation
Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration
|
MRF10120-CASE-355C-02-STYLE-1.JPG
|
|
|
2001/08/22 |
MRF587
|
Buy
|
The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
|
100
|
500
|
15
|
0.17
|
11
|
12
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF587.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV
High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz
All Gold Metal System
Ion Implanted
High fT — 5.5 GHz
Nichrome Emitter Ballast Resistors
|
|
|
|
2001/08/21 |
MRF134
|
Buy
|
The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
|
5
|
400
|
28
|
5
|
11
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF134.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel enhancement mode
Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.
Smal land Large Signal Characterization
Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain
100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR
Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
Excellent Thermal Stability, Ideally Suited for Class A Operation
100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR
|
MRF134 - Case 211-07, Style 2.JPG
|
|
|
2001/08/21 |
MRF166W
|
Buy
|
The RF MOSFET Line 40W, 500MHz, 28V
|
30
|
500
|
28
|
40
|
14
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF166W.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel enhancement mode MOSFET
Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%
Push–Pull Configuration Reduces Even Numbered Harmonics
Low Crss — 4.0 pF @ VDS = 28 V
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability Ideally Suited for Class A Operation
Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%
|
MRF166W-CASE-412-01-STYLE-1.JPG
|
|
|
2001/08/16 |
MRF141G
|
Buy
|
RF Power MOSFET 300W, 175MHz, 28V
|
5
|
175
|
28
|
300
|
12
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF141G.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance: 0.35°C/W
|
MRF141G - Case 375-04 Style 2.JPG
|
|
|
2001/08/15 |
MRF151
|
Buy
|
RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
5
|
175
|
50
|
150
|
13
|
40
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF151.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%
Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability
|
MRF151.pdf
|
|
|
2001/08/16 |
MRF10150
|
Buy
|
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz
|
1025
|
1150
|
50
|
150
|
9.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF10150.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Recommended Driver for a Pair of MRF10500 Transistors
Characterized with 10 µs, 10% Duty Cycle Pulses
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
Hermetically Sealed Package
100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
Gain = 9.5 dB min, 10.0 dB (typ.)
Output Power = 150 W Peak
Internal Input and Output Matching
|
MRF10150-CASE-376B-02-STYLE-1.JPG
|
|
|
2001/08/21 |
MRF166C
|
Buy
|
The RF MOSFET Line 20W, 500MHz, 28V
|
5
|
500
|
28
|
20
|
13.5
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF166C.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%
Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001
100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR
Low Crss — 4.0 pF @ VDS = 28 V
Facilitate Manual Gain Control, ALC and Modulation Techniques
|
MRF166C - Case 319-07 Style 3.JPG
|
|
|
2001/08/09 |
MRF150
|
Buy
|
RF Power MOSFET 150W, to 150MHz, 50V
|
5
|
150
|
50
|
150
|
17
|
45
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF150.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.)
Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
100% Test for Load Mismatch at all Phase Angels
|
MRF150- Case 211-11 Style 2.JPG
|
|
|
2001/08/12 |
MRF448
|
Buy
|
The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
|
2
|
30
|
50
|
250
|
12
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF448.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%
100% Test for Load Mismatch at all Phase Angels with 3:1 VSWR
Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)
|
MRF448.png
|
|
|
2001/07/29 |
MRF275G
|
Buy
|
The RF MOSFET Line 150W, 500MHz, 28V
|
100
|
500
|
28
|
150
|
10
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF275G.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
Typical Data for Power Amplifiers in Industrial and Commercial Applications:
Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
Simplified AVC, ALC and Modulation
Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)
|
MRF275G Case 375-04 Style 2.JPG
|
|
|
2001/08/12 |
MRF137
|
Buy
|
The RF MOSFET Line 30W, to 400MHz, 28V
|
5
|
400
|
28
|
30
|
13
|
60
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF137.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed 28 V, 150 MHz Performance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)
100% Test for Load Mistmatch at all Phase Angels with 30:1 VSWR
Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
Small and Large Signal Characterization
Excellent Thermal Stability, Ideally Suite for Class A Operation
Low Noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
Facilitates Manual Gain Control, ALC and Modulation Techniques
|
MRF137 - Case 211-07, Style 2.JPG
|
|
|
2001/08/04 |
MRF10350
|
Buy
|
Bipolar
|
1025
|
1150
|
50
|
350
|
8.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF10350.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)
Silicon Nitride Passivated
Hermetically Sealed Package
100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR
Characterized Using Mode-S Pulse Format
Internal Input and Output Matching
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
|
MRF10350-CASE-355E-01-STYLE-1.JPG
|
|
|
2001/07/14 |
MRF151G
|
Buy
|
1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
5
|
175
|
50
|
300
|
14
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF151G.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance at 175 MHz, 50 V:
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance — 0.35°C/W
Efficiency — 50%
Gain — 14 dB (16 dB Typ)
Output Power — 300 W
|
MRF151G.jpg
|
|
|
2001/07/23 |
MRF160
|
Buy
|
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
|
30
|
500
|
28
|
4
|
16
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF160.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel enhancement mode MOSFET
Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Facilitates Manual Gain Control, aLS and Modulation Techniques
Excellent Thermal Stability, Ideally Suite for Class A Operation
Low Crss – 0.8 pF Typical at VDS = 28 V
|
MRF160 - Case 249-06 Style 3.JPG
|
|
|
2001/07/14 |
MRF157
|
Buy
|
Linear RF Power MOSFET 600W, to 80MHz
|
5
|
80
|
|
600
|
21
|
45
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF157.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 50 volts, 30 MHz characteristics
Efficiency = 45% (typ.)
Power gain = 21 dB (typ.)
Output power = 600 watts
|
MRF157 - Case 368-03 Style 2.JPG
|
|
|
2001/07/14 |
MRF154
|
Buy
|
Broadband RF Power MOSFET 600W, to 80MHz, 50V
|
2
|
100
|
50
|
600
|
17
|
45
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF154.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel enhancement mode MOSFET
Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
|
MRF154 - Case 368-03 Style 2 HOG PAC.JPG
|
|
|
2001/08/08 |
MRF171A
|
Buy
|
The RF MOSFET Line 45W, 150MHz, 28V
|
100
|
200
|
28
|
45
|
17
|
60
|
TMOS
|
Flange Ceramic Pkg
|
Flange Mount
|
MRF171A.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability Suited for Cass A Operation
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)
Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment:
Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)
Gold Top Metal
Low Crss – 8 pF @ VDS = 28 V
100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Controll, ALC and Modulation Techniques
|
MRF170A - Case 211-07, Style 2.JPG
|
|
|
2001/07/14 |
MRF275L
|
Buy
|
The RF MOSFET Line 100W, 500MHz, 28V
|
5
|
500
|
28
|
100
|
8.8
|
55
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF275L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Low Thermal Resistance
100% Ruggedness Tested at Rated Output Power
Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 17 pF typ. @ VDS = 28 V
|
MRF275L-CASE-333-04-STYLE-2.JPG
|
|
|
2001/07/14 |
MRF1090MB
|
Buy
|
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
|
960
|
1215
|
50
|
90
|
8.4
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF1090MB.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR
Internal Input and Output Matching
|
MRF1090MB-CASE-332A-03-STYLE-1.JPG
|
|
|
2001/07/14 |
MRF10502
|
Buy
|
Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz
|
1025
|
1150
|
50
|
500
|
8.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF10502.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)
Internal Input and Output Matching
Gold Metalized, Emitter, Ballested for Long Life and Metal Migration
Silicon Nitride Passivated
Hermetically Sealed Industry Packaging
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Characterized with 10µs, 1% Duty Cycle Pulses
|
MRF10502-CASE-355J-02-STYLE-1.JPG
|
|
|
2001/07/14 |
MRF1150MB
|
Buy
|
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
|
960
|
1215
|
50
|
150
|
7.8
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF1150MB.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB
Nitride Passivated
Industry Standard Package
100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR
Internal Input Matching for Broadband Operation
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
|
MRF1150MB-CASE-332A-03-STYLE-1.JPG
|
|
|
2001/07/14 |
MRF1000MB
|
Buy
|
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V
|
960
|
1215
|
18
|
0.2
|
10
|
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF1000MB.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
Minimum Gain: 10dB
Output Power: 0.2W
Internal input matching for broadband operation
|
MRF1000MB-CASE-332A-03-STYLE-2.JPG
|
|
|
2001/06/09 |
DU28120T
|
Buy
|
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
|
2
|
175
|
28
|
120
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU28120T.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
|
RF T SI - DU28120T.JPG
|
|
|
2001/05/05 |
PH1090-700B
|
Buy
|
Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32µs Pulse, 2% Duty
|
1030
|
1090
|
50
|
700
|
7.5
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1090-700B.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Common Base Configuration
Broadband Class C Operation
|
PH1090-700B.jpg
|
|
|
2001/01/28 |
MRF136
|
Buy
|
The RF MOSFET Line 15W, to 400MHz, 28V
|
5
|
400
|
28
|
15
|
13
|
50
|
TMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF136.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N–Channel Enhancement Mode
Excellent Thermal Stability Suited for Cass A Operation
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Small and Large Signal Characterization
Guaranteed 28 Volt, 150 MHz Performance - Output Power = 15 Watts Narrowband Gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
Facilities Manaul Gain Control, ALC and Modulation Techniques
|
MRF136 - Case 211-07, Style 2.JPG
|
|
|
2001/01/26 |
PH1090-15L
|
Buy
|
Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty
|
1030
|
1090
|
45
|
15
|
9
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1090-15L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
|
PH1090-15L.JPG
|
|
|
2001/02/18 |
PH2729-65M
|
Buy
|
Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
|
2700
|
2900
|
36
|
65
|
8.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2729-65M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH2729-65M.jpg
|
|
|
2000/12/14 |
PH1214-12M
|
Buy
|
Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
28
|
12
|
8.5
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-12M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-12M.JPG
|
|
|
2000/12/08 |
DU2880U
|
Buy
|
RF Power MOSFET Transistor 80W, 2-175MHz, 28V
|
2
|
175
|
28
|
80
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2880U.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
|
RF PT- SI _ DU2860U.JPG
|
|
|
2000/11/26 |
DU1215S
|
Buy
|
RF Power MOSFET Transistor 15W, 2-175MHz, 12V
|
2
|
175
|
12
|
15
|
9.5
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU1215S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel enhancement mode device
Specifically designed for 12 volt applications
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
|
RF PT SI _DU1215S.JPG
|
|
|
2000/09/20 |
PH3134-10M
|
Buy
|
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M
|
3100
|
3400
|
36
|
10
|
8
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
PH3134-10M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
|
PH3134-10M.JPG
|
|
|
2000/09/25 |
PH1214-25M
|
Buy
|
Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
28
|
25
|
9.5
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-25M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-25M.JPG
|
|
|
2000/09/14 |
PH3135-25S
|
Buy
|
Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
|
3100
|
3500
|
36
|
25
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3135-25S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH3135-25S.JPG
|
|
|
2000/09/08 |
PH2729-130M
|
Buy
|
Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
|
2700
|
2900
|
36
|
130
|
7.5
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2729-130M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
MAPR-00xxxx.jpg
|
|
|
2000/09/10 |
PH1214-110M
|
Buy
|
Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
40
|
110
|
7.4
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-110M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-110M.JPG
|
|
|
2000/09/04 |
DU2810S
|
Buy
|
RF Power MOSFET Transistor 10W, 2-175MHz, 28V
|
2
|
175
|
28
|
10
|
13
|
55
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2810S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Low Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS structure
|
RF PT- SI _DU2810S.JPG
|
|
|
2000/09/04 |
DU2880T
|
Buy
|
1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
|
2
|
175
|
28
|
80
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2880T.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
|
RF PT- SI DU2880T.JPG
|
|
|
2000/09/03 |
PH1090-550S
|
Buy
|
Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty
|
1030
|
1090
|
50
|
550
|
7.4
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1090-550S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1090-550S.jpg
|
|
|
2000/09/01 |
PH1214-2M
|
Buy
|
Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
|
1200
|
1400
|
28
|
2
|
7
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-2M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-2M.JPG
|
|
|
2000/08/16 |
PH1617-2
|
Buy
|
Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz
|
1600
|
1700
|
25
|
2
|
10
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1617-2.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Designed for Linear Amplifier Applications
Diffused Emitter Ballasting Resistor
Common Emitter Configuration
Class A: +44 dBm typ. 3rd Order Intercept Point
Class AB: -33 dBc typ. 3rd IMD at 2 W PEP
Internal Input Impedance Matching
|
PH1617-2.JPG
|
|
|
2000/08/16 |
PH1214-100EL
|
Buy
|
Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
|
1200
|
1400
|
28
|
100
|
6
|
52
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-100EL.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Common Base Configuration
Broadband Class C Operation
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistors
Gold Metallization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
RoHS Compliant
|
PH1214-100EL.JPG
|
|
|
2000/08/21 |
PH1214-80M
|
Buy
|
Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
40
|
80
|
7.9
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-80M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-80M.JPG
|
|
|
2000/08/17 |
PH3135-5M
|
Buy
|
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
|
3100
|
3500
|
33
|
5
|
8.5
|
30
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3135-5M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Common Base Configuration
Broadband Class C Operation
|
PH3135-5M.JPG
|
|
|
2000/08/07 |
LF2805A
|
Buy
|
RF Power MOSFET Transistor 5W, 500-1000MHz, 28V
|
500
|
1000
|
28
|
5
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
LF2805A.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Low Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS structure
500 MHz to 1400 MHz
Broadband Linear Operation
|
|
|
|
2000/08/07 |
PH1214-6M
|
Buy
|
Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
|
1200
|
1400
|
28
|
6
|
7
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-6M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-6M.JPG
|
|
|
2000/08/07 |
PH2226-50M
|
Buy
|
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
|
2200
|
2600
|
36
|
50
|
8
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2226-50M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH2226-50M.JPG
|
|
|
2000/08/06 |
PH3135-90S
|
Buy
|
Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
|
3100
|
3500
|
36
|
90
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3135-90S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
|
PH3135-90S.jpg
|
|
|
2000/08/07 |
UF2815B
|
Buy
|
1 RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
|
100
|
500
|
28
|
15
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2815B.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Capacitances for Broadband Operations
DMOS Structure
100 MHz to 500 MHz Operation
RoHS Compliant
Low Noise Floor
Common Source Configuration
|
UF2815B.JPG
|
|
|
2000/07/30 |
PH1090-175L
|
Buy
|
Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty
|
1030
|
1090
|
45
|
175
|
8.3
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
PH1090-175L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon MicrowavePower Transistor
RoHS Compliant
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
|
PH1090-175L.JPG
|
|
|
2000/07/27 |
PH2226-110M
|
Buy
|
Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M
|
2250
|
2550
|
36
|
110
|
7.4
|
40
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2226-110M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
|
PH2226-110M.jpg
|
|
|
2000/07/27 |
DU28120V
|
Buy
|
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
|
2
|
175
|
28
|
120
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU28120V.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
|
RF PT SI - DU28120V.JPG
|
|
|
2000/07/26 |
PH2729-110M
|
Buy
|
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
|
2700
|
2900
|
36
|
110
|
6.8
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2729-110M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold metallization system
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH2729-110M.jpg
|
|
|
2000/07/26 |
UF2805B
|
Buy
|
1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
|
100
|
500
|
28
|
5
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2805B.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
100 MHz to 500 MHz Operation
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
|
UF2805B.JPG
|
|
|
2000/07/26 |
UF2840P
|
Buy
|
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
100
|
500
|
28
|
40
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2840P.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
|
UF2840P.JPG
|
|
|
2000/07/26 |
PH2729-25M
|
Buy
|
Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
|
2700
|
2900
|
36
|
25
|
9.2
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
PH2729-25M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Gold Metallization System
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
|
PH2729-25M.JPG
|
|
|
2000/07/26 |
PH2731-5M
|
Buy
|
Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
|
2700
|
3100
|
36
|
5
|
7
|
30
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
PH2731-5M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Internal Input and Output Impedance Matching
RoHS Compliant
Hermetic Metal/Ceramic Package
|
PH2731-5M.JPG
|
|
|
2000/07/23 |
DU2805S
|
Buy
|
RF Power MOSFET Transistor 5W, 2-175MHz, 28V
|
2
|
175
|
28
|
5
|
11
|
55
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2805S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
|
RF PT- SI _ DU2805S.JPG
|
|
|
2000/07/23 |
DU2820S
|
Buy
|
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
|
2
|
175
|
28
|
20
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2820S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
|
RF PT- SI DU2820S.JPG
|
|
|
2000/07/23 |
PH2731-20M
|
Buy
|
Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
|
2700
|
3100
|
36
|
20
|
8.2
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Flange Mount
|
PH2731-20M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH2731-20M.JPG
|
|
|
2000/07/21 |
PH3135-20M
|
Buy
|
Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
|
3100
|
3500
|
36
|
20
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3135-20M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistors
Broadband Class C Operation
Common Base Configuration
|
PH3135-20M.JPG
|
|
|
2000/07/21 |
DU28200M
|
Buy
|
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
|
2
|
175
|
28
|
200
|
13
|
55
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU28200M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
|
RF PT- SI _ DU28200M.JPG
|
|
|
2000/07/21 |
PH2731-75L
|
Buy
|
Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty
|
2700
|
3100
|
36
|
75
|
7.45
|
38
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH2731-75L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH2731-75L.JPG
|
|
|
2000/07/20 |
PH1090-75L
|
Buy
|
Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty
|
1030
|
1090
|
45
|
75
|
9
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1090-75L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1090-75L.JPG
|
|
|
2000/07/21 |
PH1214-220M
|
Buy
|
Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
40
|
220
|
7.4
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-220M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Gold Metallization System
InternalInput and Output Impedance Matching
|
PH1214-220M.jpg
|
|
|
2000/07/21 |
UF2810P
|
Buy
|
RF Power MOSFET Transistor 10W, 100-500 MHz, 28V
|
100
|
500
|
28
|
10
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2810P.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel enhancement mode device
100 MHz to 500 MHz operation
Lower noise floor
Common source configuration
Lower capacitances for broadband operation
DMOS structure
|
MACOM_general.png
|
|
|
2000/07/20 |
UF2840G
|
Buy
|
RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
|
100
|
500
|
28
|
40
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2840G.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
100 MHz to 500 MHz Operation
Lower Noise Floor
Lower Capacitances for Broadband Operation
DMOS Structure
Common Source Configuration
|
UF2840G.JPG
|
|
|
2000/07/21 |
PH1090-350L
|
Buy
|
Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty
|
1090
|
1090
|
45
|
350
|
8
|
55
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1090-350L.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C operation
|
PH1090-350L.jpg
|
|
|
2000/07/20 |
UF28100M
|
Buy
|
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
100
|
500
|
28
|
100
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF28100M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
RoHS Compliant
Lower Noise Figure than Competitive Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
|
UF28100M.JPG
|
|
|
2000/07/21 |
UF2820P
|
Buy
|
RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
|
100
|
500
|
28
|
20
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF2820P.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
|
UF2820P.JPG
|
|
|
2000/07/20 |
UF28100V
|
Buy
|
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
100
|
500
|
28
|
100
|
10
|
50
|
DMOS
|
Flange Ceramic Pkg
|
Flange Mount
|
UF28100V.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-channel Enhancement Mode Device
High Saturated Output Power
Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices
DMOS Structure
Lower Noise Figure than Competitive Devices
|
UF28100V.JPG
|
|
|
2000/07/19 |
UF28150J
|
Buy
|
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
|
100
|
500
|
28
|
150
|
8
|
55
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
UF28150J.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
DMOS Structure
Common Source Configuration
Lower Capacitance for Broadband Operation
|
UF28150J.JPG
|
|
|
2000/07/19 |
PH1214-40M
|
Buy
|
Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
|
1200
|
1400
|
40
|
40
|
8.5
|
50
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH1214-40M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
|
PH1214-40M.JPG
|
|
|
2000/07/18 |
DU2840S
|
Buy
|
RF Power MOSFET Transistor 40W, 2-175MHz, 28V
|
2
|
175
|
28
|
40
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
CeramicFlange Mount
|
DU2840S.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
|
MACOM_general.png
|
|
|
2000/07/19 |
DU2860U
|
Buy
|
RF Power MOSFET Transistor 60W, 2-175MHz, 28V
|
2
|
175
|
28
|
60
|
13
|
60
|
DMOS
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
DU2860U.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
N-Channel Enhancement Mode Device
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Lower Noise Figure than Bipolar Devices
|
RF PT- SI _ DU2860U.JPG
|
|
|
|
PHA3135-130M
|
Buy
|
Pulsed Power Pallet
|
3100
|
3500
|
36
|
130
|
7.4
|
35
|
Pallet
|
Pallet
|
Pallet
|
PHA3135-130M.pdf
|
Yes
|
|
NPN Silicon Bipolar Transistor
Plated Copper Flange
Easily Combined for High Power Transmitters
Duroid Circuit Board
Input and Output Matched to 50O
|
|
10
|
100
|
2017/05/01 |
PHA2731-190M
|
Buy
|
Radar Pulsed Power Amplifier
|
2700
|
3100
|
|
190
|
7.5
|
33
|
Pallet
|
Pallet
|
Pallet
|
PHA2731-190M.pdf
|
Yes
|
|
|
|
10
|
200
|
2018/06/05 |
MRF448A
|
Buy
|
The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
|
1
|
30
|
50
|
250
|
12
|
45
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
MRF448A.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%
100% tested for Load Mismatch at all Phase Angels with 3:1 VSWR
Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)
|
MRF448.png
|
|
|
2000/10/22 |
PH3135-65M
|
Buy
|
Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
|
3100
|
3500
|
|
65
|
7.5
|
35
|
Bipolar
|
Flange Ceramic Pkg
|
Ceramic Flange Mount
|
PH3135-65M.pdf
|
Yes
|
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
|
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
|
PH3135-65M.jpg
|
|
|