RF Power Amplifiers - Silicon Bipolar & MOSFET

MACOM offers a broad range of silicon based RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our silicon bipolar and MOSFET high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication processes ensures high performance and long term reliability for ground and space applications.

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releaseDate	Part Number	Ordering	Short Description	Min Frequency (MHz)	Max Frequency (MHz)	Bias Voltage (V)	Pout (W)	Gain (dB)	Efficiency (%)	Type	Package	Package Category	Datasheet	Lead-Free	Application Notes	Features	Product Image	Duty Cycle (%)	Pulse Width (µS)

2007/10/15	MAPR-001090-350S00	Buy	Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10Âµs Pulse, 1% Duty	1025	1150	50	350	9	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPR-001090-350S00.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Gold Metallizsation System Diffused emitter ballasting Resistor High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Confirguration Hermetic Metal/cCeramic Package Internal Input and Output Impedance Matching RoHS Compliant	MAPR-001090-350S00_355E-01 Style 1 Ceramic.JPG
2007/08/15	MAPR-001011-850S00	Inquire	Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10Âµs Pulse, 1% Duty	1025	1150	50	850	7.8	42	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPR-001011-850S00.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Diffused Emitter ballasting resistors High efficiency Inter-Digitized Geometry Broadband Class C operation Common Base Configuration Hermetic Metal/ceramic Package Internal Input and Output Impedance Matching Gold Metallization System RoHS Compliant	MAPR-00xxxx.jpg
2007/02/01	MAPR-000912-500S00	Buy	Avionics Pulsed Power Transistor 500W, 960-1215 MHz, 10µs Pulse, 10% Duty	960	1215	50	500	9	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPR-000912-500S00.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistor Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package RoHS compliant	MAPR-00xxxx.jpg
2006/12/10	MAPR-002729-170M00	Buy	Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty	2700	2900	36	170	8.5	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPR-002729-170M00.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package	MAPR-002729-170M00.JPG
2006/12/09	MAPRST0912-50	Buy	Avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10µs Pulse, 10% Duty	960	1215	50	50	9.1	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPRST0912-50.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Gold Metallization System Diffused Emitter Ballasting Resistor High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Out Impedance Matching	MAPRST0912-50.JPG
2006/09/30	MAPRST0912-350	Buy	Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty	960	1215	50	350	9.4	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPRST0912-350.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration RoHS Compliant Hermetic Metal/Ceramic Package	MAPRST0912-350.JPG
2006/01/30	MAPRST1030-1KS	Buy	Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10µs Pulse, 1% Duty	1030	1030	50	1000	8	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MAPRST1030-1KS.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Diffused Emitter Ballasting Resistor High efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System RoHS Compliant	MAPRST1030-1KS.JPG
2004/12/27	MRF428	Buy	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V	1	30	50	150	13	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF428.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 DB, Efficiency = 45% Intermodulation distortion @ 150 W (PEP): IMD = -30 db (max.) 100% Tested Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW	MRF428-CASE-211-07-STYLE-1.JPG
2003/05/30	PHA2729-300M	Inquire	1 Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100µs Pulse, 10%Duty	2700	2900	38	300	7.5	36	Module	Pallet	Pallet	PHA2729-300M.pdf	No	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Includes RC Bias circuit MTTF > 1x106 hrs @ Tflange=45 °C Nickel Plated Copper Flange Soft substrate eR=10.5 Input and output matched to 50 W In-Phase combined pulsed power transistors	PHA2729-300M.JPG	10	100
2003/03/17	PH3134-55L	Buy	Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty	3100	3400	36	55	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3134-55L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH3134-55L.JPG
2003/01/29	MRF176GU	Buy	The RF MOSFET Line 200/150W, 500MHz, 50V	5	400	50	150	12	45	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF176GU.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.) MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ. MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.) Low Crss — 7.0 pF Typ @ VDS = 50 V Low Thermal Resistance 100% Ruggedness Tested at Rated Output Power	MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
2002/10/21	MRF151A	Buy	MOSFET	5	175		150	13	40	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF151A.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola) AN4001 - 300 Watt Class E Amplifier Using MRF151A	Enhanced Thermal Performance Higher Power Dissipation Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40% Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability	MRF151A - Case P.JPG
2002/06/09	PH3134-20L	Inquire	Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty	3100	3400	36	20	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3134-20L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors Broadband Class C Operation Common Base Configuration	PH3134-20L.JPG
2001/12/24	PH1214-300M	Buy	Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	40	300	8.75	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-300M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration RoHS Compliant	PH1214-300M.JPG
2001/10/24	MRF1004MB	Buy	Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz	960	1215	35	4	10	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF1004MB.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 W Peak Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Nitride Passivated Industry Standard Package 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Minimum Gain = 10 dB Internal Input Matching for Broadband Operation	MRF1004MB-CASE-332A-03-STYLE-1.JPG
2001/10/24	MRF175LU	Buy	The RF MOSFET Line 100W, 400MHz, 28V	5	400	28	100	8	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF175LU.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.) Low Crss — 20 pF Typ @ VDS = 28 V Low Thermal Resistance 100% Rruggedness Tested at Rated Output Power	MRF175LU-CASE-333-04-STYLE-2.JPG
2001/10/24	MRF176GV	Buy	The RF MOSFET Line 200/150W, 500MHz, 50V	5	225	50	200	15	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF176GU.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.) MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.) Low Crss — 7.0 pF Typ @ VDS = 50 V Low Thermal Resistance 100% Ruggedness Tested at Rate Output Power	MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
2001/09/29	MRF140	Buy	The RF MOSFET Line 30W, to 400MHz, 28V	5	150	28	150	15	40	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF140.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode IMD(d11) (150 W PEP): –60 dB (Typ.) Superior High Order IMD Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.) 100%Test for Load Mismatch at all Phase with 30:1 VSWR IMD(d3) (150 W PEP): –30 dB (Typ.)	MRF140 - Case 211-11 Style 2.JPG
2001/10/14	MRF321	Buy	The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V	200	500	28	10	12	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF321.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min. 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc Computer–controlled wirebonding gives consistent input Impedance Gold Metallization System for High Reliability	MRF-321-CASE-244-04-STYLE-1.JPG
2001/10/26	2N6439	Buy	The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V	225	400	28	60	7.8	55	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	2N6439.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz Gold Metallization System for High Reliability Application 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc Built–In Matching Network for Broadband Operation using Double Match Technique	2N6439 - Case 316 -.JPG
2001/09/20	MRF421	Buy	The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V	2	30	12.5	100	10	40	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF421.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 12.5 V, 30 MHz characteristics: Output Power= 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40% Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (min.) 100% Tested for Load Mismatch at all Phase Angelswith 30:1 VSWR	MRF421-CASE-211-11-STYLE-1.JPG
2001/09/20	MRF429	Buy	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V	2	30	50	150	13	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF429.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% Diffused emitter resistors for superior ruggedness Intermodulation distortion @ 150 W (PEP): IMD = –32 dB (Max) 100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW
2001/09/20	MRF175GU	Buy	The RF MOSFET Line 200/150W, 500MHz, 28V	5	400	28	150	12	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF175GU.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.) 100% RuggednessTested at a Rated output Power MRF175GV @ 28 V, 225 MHz (“V” Suffix) Low Crss — 20 pF typ @ VDS = 28 V Low Thermal Resistance	MRF175GU - Case 375-04 Style 2.JPG
2001/09/09	MRF148A	Buy	Linear RF Power MOSFET 30W, to 175MHz, 50V	5	175	50	30	18	40	TMOS	Flange Ceramic Pkg	Flange Mount	MRF148A.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.) 100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR Lower Reverse Transfer Capacitance (3.0 pF typ.) Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40% (Typ.)	MRF148A - Case 211-07, Style 2.JPG
2001/09/15	MRF173CQ	Buy	The RF MOSFET Line 80W, 175MHz, 28V	5	175	28	80	11	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF173CQ.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Excellent Thermal Stability; Suited for Class A Operation Low Noise Figure— 1.5 dB (Typ.) at 2.0 A, 150 MHz Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power Low Thermal Resistance Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% Min. (60% Typ.)	MRF173CQ - Case 316-01 Style 2.JPG
2001/09/20	PH1214-55EL	Buy	Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty	1200	1400	28	55	6.6	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-55EL.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-55EL.JPG
2001/09/17	MRF141	Buy	RF Power MOSFET 150W, to 175MHz, 28V	5	175	28	150	18	40	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF141.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40% Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB Low Thermal Resistance Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power	MRF141- Case 211-11 Style 2.JPG
2001/09/12	MRF422	Buy	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V	2	30	28	150	10	40	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF422.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%, Minimum Gain = 10 dB Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.) 100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR	MRF422-CASE-211-11-STYLE-1.JPG
2001/09/18	MRF313	Buy	The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V	400	400	28	1	15	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF313.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola) AN4002 - Recommendations For Long-Term Transistor Storage	Specified 28 V, 400 MHz Characteristics: Output Power = 1.0 W, Power Gain = 15 dB min.,Efficiency = 45% (Typ.) Emitter Ballast and Low Current Destiny for Improved MTBF Common Emitter for Improved Stability	MRF313 - Case 305-01 Style 2.JPG
2001/09/23	MRF323	Buy	The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V	200	500	28	20	10	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF323.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min. Gold Metallization System for High Reliability 100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR • Computer Controlled Wirebonding Gives Consistent Input Impedance	MRF-323-CASE-244-04-STYLE-1.JPG
2001/09/09	MRF136Y	Buy	The RF MOSFET Line 30W, to 400MHz, 28V	5	400	28	30	12	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF136Y.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode 100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR Small and Large Signal characterization Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.) Facilitates Manual Gain Control ALC and Modulation Techniques Excellent Thermal Stability, Ideally Suited for Class A Operation Space Saving Package for Push–:Pull Circuit Applications	MRF136Y - Case 319 B-02 Style 1.JPG
2001/09/05	MRF174	Buy	The RF MOSFET Line 125W, 200MHz	5	200		125	9	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF174.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability; ideally Suite for Class A Operations Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.) Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz	MRF174- Case 211-02 Style 2.JPG
2001/09/08	MRF327	Buy	NPN, Power Transistor 80W, 100 to 500MHz, 28V	100	500	28	80	7.3	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF327.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz Characterized for 100 =8 500 MHz Gold Metallization System for High Reliability applications 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Built–In Matching Network for Broadband Operation using Double Match Technique	MRF327-CASE-316-01-STYLE-1.JPG
2001/09/06	MRF158	Buy	The Broadband RF MOSFET Line 2W, 500MHz, 28V	5	500	28	2	16	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF158.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel enhancement mode Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.) Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR Excellent Thermal Stability Ideally Suited for Class A Operation	MRF158 - Case 305-01 Style 2.JPG
2001/08/29	MRF173	Buy	The RF MOSFET Line 80W, 175MHz, 28V	5	175	28	80	11	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF173.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Low Thermal Resistance Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.) Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power Excellent Thermal Stability, Suite for Class A Operation Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz	MRF173- Case 211-11 Style 2.JPG
2001/09/04	MRF175GV	Buy	The RF MOSFET Line 200/150W, 500MHz, 28V	5	225	28	200	14	65	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF175GU.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Low Crss — 20 pF typ @ VDS = 28 V Low Thermal Resistance 100% Ruggedness Test at Rate Output Power Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ	MRF175GU - MRF175GV Case 375-04 Style 2.JPG
2001/08/31	MRF177	Buy	The RF MOSFET Line 100W, 400MHz, 28V	5	400	28	100	12	60	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF177.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Excellent Thermal Stability; Suited for Class A Operation Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power Low Crss — 10 pF typ. @ VDS = 28 V Low Thermal Resistance Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%	MRF177-CASE-744A-01-STYLE-2.JPG
2001/08/23	MRF455	Buy	The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V	2	30	12.5	60	13	55	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF455.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 12.5 V, 30 MHz Characteristics: Efficiency = 55% Minimum Gain = 13 dB Output Power = 60 W	MRF455 - Case 211-07 Style 1.JPG
2001/08/25	MRF316	Buy	The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V	30	200	28	80	10	55	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF316.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed performance at 150 MHz, 28 Vdc: Output Power = 80 W, Minimum Gain = 10 dB 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Built–in Matching Network for Broadband Operation Gold Metallization System for High Reliability Applications	MRF316 -Case 316.JPG
2001/08/27	MRF426	Buy	1 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V	2	30	28	25	22	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF426.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35% Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max) Class A and AB Characterization 100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR BLX 13 Equivalent	MRF426-CASE-211-11-STYLE-1.JPG
2001/08/23	MRF392	Buy	NPN, Power Transistor 80W, 100 to 500MHz, 28V	100	400	28	125	10	55	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF392.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 28 V, 400 MHz characteristics: Output Power = 125 W, Typical Gain = 10 dB, Efficiency = 55% (Typ.) Gold Metallization System for High Reliability Push–Pull Configuration Reduces Even Numbered Harmonics Built–Input Impedance Matching Networks for Broadband Operations 100% Tested for Load Mismatch	MRF392-CASE-744A-01-STYLE-2.JPG
2001/08/25	MRF10031	Buy	Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V	960	1215	36	30	9	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF10031.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance@ 960-1215MHz, 36Vdc Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated Hermetically sealed, industry standard package 100%Tesdted for Load Mismatch all Phase Angles with 10:1 VSWR Minimum Gain: 9.0dB min., 9.5dB typ. Output Power: 30W peak Internal Input Matching for Broadband Operation	MRF10031-CASE-332A-03-STYLE-2.JPG
2001/08/27	MRF454	Buy	The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V	2	30	12.5	80	12	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF454.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 12.5 V, 30 MHz characteristics: Efficiency = 50% Minimum gain = 12 dB Output power = 80 W	MRF454-CASE-211-11-STYLE-1.JPG
2001/08/23	MRF10005	Buy	Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V	960	1215	28	5	8.5	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF10005.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @1.215GHz, 28Vdc Hermetically Sealed Industry Standard Package 100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR RF Performance Curves for 28 Vdc and 36 Vdc Operation Minimum Gain = 8.5dB, 10.3dB (Typ.) Output Power: 5.0W CW Internal Input Matching for Broadband Operation Gold Metallized, Emitter Ballasted for Long Life and Rresistance to Metal Migration Silicon Nitride Passivated	MRF10005-CASE-336E-02-STYLE-1.JPG
2001/08/27	MRF393	Buy	NPN, Power Transistor 100W, 30 to 500MHz, 28V	30	500	28	100	9.5	55	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF393.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.) Gold Metallization System for High Reliability Push–Pull Configuration Reduces Even Numbered Harmonics Built–In Input Impedance Matching Networks for Broad Operatons 100% Test for Load Mismatch	MRF393-CASE-744A-01-STYLE-2.JPG
2001/08/23	MRF314	Buy	The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V	30	200	28	30	10	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF314.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB Gold Metallization System for High Reliability Applications 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR	MRF314 - Case 211-07 Style 1.JPG
2001/08/16	MRF317	Buy	The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V	30	200	28	100	9	55	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF317.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 150 MHz, 28 Vdc: Output Power = 100 W, Minimum Gain = 9.0 dB Gold Metallization System for High Reliability Applications 100% Test for Load at all Phase Angels with 30:1 VSWR Built–in matching network for broadband operation Guaranteed Performance in Broadband Test Fixture Peak AM Amplifier Service High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W	MRF317 -Case 316.JPG
2001/08/22	MRF10120	Buy	Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz	960	1215	36	120	8	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF10120.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1.215 GHz, 36 Vdc Silicon Nitride Passivated Hermetically Sealer Industry Standard Package 100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR Gain = 7.6 dB min., 8 .5 dB (typ.) Output Power = 120 W Peak Internal Input and Output Matching for Broadband Operation Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration	MRF10120-CASE-355C-02-STYLE-1.JPG
2001/08/22	MRF587	Buy	The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz	100	500	15	0.17	11	12	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF587.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz All Gold Metal System Ion Implanted High fT — 5.5 GHz Nichrome Emitter Ballast Resistors
2001/08/21	MRF134	Buy	The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V	5	400	28	5	11	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF134.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel enhancement mode Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ. Smal land Large Signal Characterization Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain 100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz Excellent Thermal Stability, Ideally Suited for Class A Operation 100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR	MRF134 - Case 211-07, Style 2.JPG
2001/08/21	MRF166W	Buy	The RF MOSFET Line 40W, 500MHz, 28V	30	500	28	40	14	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF166W.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel enhancement mode MOSFET Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60% Push–Pull Configuration Reduces Even Numbered Harmonics Low Crss — 4.0 pF @ VDS = 28 V 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability Ideally Suited for Class A Operation Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%	MRF166W-CASE-412-01-STYLE-1.JPG
2001/08/16	MRF141G	Buy	RF Power MOSFET 300W, 175MHz, 28V	5	175	28	300	12	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF141G.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50% Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power Low Thermal Resistance: 0.35°C/W	MRF141G - Case 375-04 Style 2.JPG
2001/08/15	MRF151	Buy	RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET	5	175	50	150	13	40	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF151.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40% Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability	MRF151.pdf
2001/08/16	MRF10150	Buy	Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz	1025	1150	50	150	9.5	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF10150.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Recommended Driver for a Pair of MRF10500 Transistors Characterized with 10 µs, 10% Duty Cycle Pulses Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated Hermetically Sealed Package 100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR Gain = 9.5 dB min, 10.0 dB (typ.) Output Power = 150 W Peak Internal Input and Output Matching	MRF10150-CASE-376B-02-STYLE-1.JPG
2001/08/21	MRF166C	Buy	The RF MOSFET Line 20W, 500MHz, 28V	5	500	28	20	13.5	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF166C.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50% Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001 100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR Low Crss — 4.0 pF @ VDS = 28 V Facilitate Manual Gain Control, ALC and Modulation Techniques	MRF166C - Case 319-07 Style 3.JPG
2001/08/09	MRF150	Buy	RF Power MOSFET 150W, to 150MHz, 50V	5	150	50	150	17	45	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF150.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.) Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.) 100% Test for Load Mismatch at all Phase Angels	MRF150- Case 211-11 Style 2.JPG
2001/08/12	MRF448	Buy	The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V	2	30	50	250	12	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF448.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45% 100% Test for Load Mismatch at all Phase Angels with 3:1 VSWR Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)	MRF448.png
2001/07/29	MRF275G	Buy	The RF MOSFET Line 150W, 500MHz, 28V	100	500	28	150	10	50	TMOS	Flange Ceramic Pkg	Flange Mount	MRF275G.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1 Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF Typical Data for Power Amplifiers in Industrial and Commercial Applications: Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65% Simplified AVC, ALC and Modulation Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60% Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)	MRF275G Case 375-04 Style 2.JPG
2001/08/12	MRF137	Buy	The RF MOSFET Line 30W, to 400MHz, 28V	5	400	28	30	13	60	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF137.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed 28 V, 150 MHz Performance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.) 100% Test for Load Mistmatch at all Phase Angels with 30:1 VSWR Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain Small and Large Signal Characterization Excellent Thermal Stability, Ideally Suite for Class A Operation Low Noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz Facilitates Manual Gain Control, ALC and Modulation Techniques	MRF137 - Case 211-07, Style 2.JPG
2001/08/04	MRF10350	Buy	Bipolar	1025	1150	50	350	8.5	40	Bipolar	Flange Ceramic Pkg	Flange Mount	MRF10350.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.) Silicon Nitride Passivated Hermetically Sealed Package 100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR Characterized Using Mode-S Pulse Format Internal Input and Output Matching Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration	MRF10350-CASE-355E-01-STYLE-1.JPG
2001/07/14	MRF151G	Buy	1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET	5	175	50	300	14	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF151G.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance at 175 MHz, 50 V: Nitride Passivated Die for Enhanced Reliability Ruggedness Tested at Rated Output Power Low Thermal Resistance — 0.35°C/W Efficiency — 50% Gain — 14 dB (16 dB Typ) Output Power — 300 W	MRF151G.jpg
2001/07/23	MRF160	Buy	The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V	30	500	28	4	16	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF160.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel enhancement mode MOSFET Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.) 100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR Facilitates Manual Gain Control, aLS and Modulation Techniques Excellent Thermal Stability, Ideally Suite for Class A Operation Low Crss – 0.8 pF Typical at VDS = 28 V	MRF160 - Case 249-06 Style 3.JPG
2001/07/14	MRF157	Buy	Linear RF Power MOSFET 600W, to 80MHz	5	80		600	21	45	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF157.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 50 volts, 30 MHz characteristics Efficiency = 45% (typ.) Power gain = 21 dB (typ.) Output power = 600 watts	MRF157 - Case 368-03 Style 2.JPG
2001/07/14	MRF154	Buy	Broadband RF Power MOSFET 600W, to 80MHz, 50V	2	100	50	600	17	45	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF154.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel enhancement mode MOSFET Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)	MRF154 - Case 368-03 Style 2 HOG PAC.JPG
2001/08/08	MRF171A	Buy	The RF MOSFET Line 45W, 150MHz, 28V	100	200	28	45	17	60	TMOS	Flange Ceramic Pkg	Flange Mount	MRF171A.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode MOSFET Excellent Thermal Stability Suited for Cass A Operation Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min) Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment: Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.) Gold Top Metal Low Crss – 8 pF @ VDS = 28 V 100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Facilitates Manual Gain Controll, ALC and Modulation Techniques	MRF170A - Case 211-07, Style 2.JPG
2001/07/14	MRF275L	Buy	The RF MOSFET Line 100W, 500MHz, 28V	5	500	28	100	8.8	55	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF275L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Low Thermal Resistance 100% Ruggedness Tested at Rated Output Power Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.) Low Crss — 17 pF typ. @ VDS = 28 V	MRF275L-CASE-333-04-STYLE-2.JPG
2001/07/14	MRF1090MB	Buy	Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz	960	1215	50	90	8.4	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF1090MB.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Nitride Passivated Industry Standard Package 100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR Internal Input and Output Matching	MRF1090MB-CASE-332A-03-STYLE-1.JPG
2001/07/14	MRF10502	Buy	Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz	1025	1150	50	500	8.5	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF10502.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.) Internal Input and Output Matching Gold Metalized, Emitter, Ballested for Long Life and Metal Migration Silicon Nitride Passivated Hermetically Sealed Industry Packaging 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Characterized with 10µs, 1% Duty Cycle Pulses	MRF10502-CASE-355J-02-STYLE-1.JPG
2001/07/14	MRF1150MB	Buy	Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz	960	1215	50	150	7.8	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF1150MB.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB Nitride Passivated Industry Standard Package 100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR Internal Input Matching for Broadband Operation Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration	MRF1150MB-CASE-332A-03-STYLE-1.JPG
2001/07/14	MRF1000MB	Buy	Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V	960	1215	18	0.2	10		Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF1000MB.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Nitride Passivated Industry Standard Package 100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR Minimum Gain: 10dB Output Power: 0.2W Internal input matching for broadband operation	MRF1000MB-CASE-332A-03-STYLE-2.JPG
2001/06/09	DU28120T	Buy	RF Power MOSFET Transistor 120W, 2-175MHz, 28V	2	175	28	120	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU28120T.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel enhancement mode device Lower noise figure than bipolar devices High saturated output power Lower capacitances for broadband operation DMOS structure	RF T SI - DU28120T.JPG
2001/05/05	PH1090-700B	Buy	Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32µs Pulse, 2% Duty	1030	1090	50	700	7.5	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1090-700B.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Common Base Configuration Broadband Class C Operation	PH1090-700B.jpg
2001/01/28	MRF136	Buy	The RF MOSFET Line 15W, to 400MHz, 28V	5	400	28	15	13	50	TMOS	Flange Ceramic Pkg	Ceramic Flange Mount	MRF136.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N–Channel Enhancement Mode Excellent Thermal Stability Suited for Cass A Operation 100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR Small and Large Signal Characterization Guaranteed 28 Volt, 150 MHz Performance - Output Power = 15 Watts Narrowband Gain = 16 dB (Typ.) Efficiency = 60% (Typ.) Facilities Manaul Gain Control, ALC and Modulation Techniques	MRF136 - Case 211-07, Style 2.JPG
2001/01/26	PH1090-15L	Buy	Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty	1030	1090	45	15	9	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1090-15L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration RoHS Compliant Hermetic Metal/Ceramic Package	PH1090-15L.JPG
2001/02/18	PH2729-65M	Buy	Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty	2700	2900	36	65	8.5	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2729-65M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH2729-65M.jpg
2000/12/14	PH1214-12M	Buy	Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	28	12	8.5	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-12M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-12M.JPG
2000/12/08	DU2880U	Buy	RF Power MOSFET Transistor 80W, 2-175MHz, 28V	2	175	28	80	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2880U.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device High Saturate Output Power Lower Capacitances for Broadband Operation DMOS Structure	RF PT- SI _ DU2860U.JPG
2000/11/26	DU1215S	Buy	RF Power MOSFET Transistor 15W, 2-175MHz, 12V	2	175	12	15	9.5	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU1215S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel enhancement mode device Specifically designed for 12 volt applications Lower noise figure than bipolar devices High saturated output power Lower capacitances for broadband operation DMOS structure	RF PT SI _DU1215S.JPG
2000/09/20	PH3134-10M	Buy	Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M	3100	3400	36	10	8	35	Bipolar	Flange Ceramic Pkg	Flange Mount	PH3134-10M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration RoHS Compliant Hermetic Metal/Ceramic Package	PH3134-10M.JPG
2000/09/25	PH1214-25M	Buy	Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	28	25	9.5	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-25M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-25M.JPG
2000/09/14	PH3135-25S	Buy	Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty	3100	3500	36	25	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3135-25S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH3135-25S.JPG
2000/09/08	PH2729-130M	Buy	Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty	2700	2900	36	130	7.5	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2729-130M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	MAPR-00xxxx.jpg
2000/09/10	PH1214-110M	Buy	Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	40	110	7.4	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-110M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-110M.JPG
2000/09/04	DU2810S	Buy	RF Power MOSFET Transistor 10W, 2-175MHz, 28V	2	175	28	10	13	55	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2810S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Low Noise Floor Common Source Configuration Lower Capacitances for Broadband Operation DMOS structure	RF PT- SI _DU2810S.JPG
2000/09/04	DU2880T	Buy	1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V	2	175	28	80	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2880T.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Figure than Bipolar Devices High Saturated Output Power Lower Capacitances for Broadband Operation DMOS Structure	RF PT- SI DU2880T.JPG
2000/09/03	PH1090-550S	Buy	Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty	1030	1090	50	550	7.4	55	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1090-550S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1090-550S.jpg
2000/09/01	PH1214-2M	Buy	Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty	1200	1400	28	2	7	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-2M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-2M.JPG
2000/08/16	PH1617-2	Buy	Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz	1600	1700	25	2	10	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1617-2.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Designed for Linear Amplifier Applications Diffused Emitter Ballasting Resistor Common Emitter Configuration Class A: +44 dBm typ. 3rd Order Intercept Point Class AB: -33 dBc typ. 3rd IMD at 2 W PEP Internal Input Impedance Matching	PH1617-2.JPG
2000/08/16	PH1214-100EL	Buy	Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty	1200	1400	28	100	6	52	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-100EL.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package RoHS Compliant	PH1214-100EL.JPG
2000/08/21	PH1214-80M	Buy	Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	40	80	7.9	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-80M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-80M.JPG
2000/08/17	PH3135-5M	Buy	Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty	3100	3500	33	5	8.5	30	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3135-5M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistor Common Base Configuration Broadband Class C Operation	PH3135-5M.JPG
2000/08/07	LF2805A	Buy	RF Power MOSFET Transistor 5W, 500-1000MHz, 28V	500	1000	28	5	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	LF2805A.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Low Noise Floor Common Source Configuration Lower Capacitances for Broadband Operation DMOS structure 500 MHz to 1400 MHz Broadband Linear Operation
2000/08/07	PH1214-6M	Buy	Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty	1200	1400	28	6	7	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-6M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-6M.JPG
2000/08/07	PH2226-50M	Buy	Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty	2200	2600	36	50	8	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2226-50M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH2226-50M.JPG
2000/08/06	PH3135-90S	Buy	Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty	3100	3500	36	90	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3135-90S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistor Broadband Class C Operation Common Base Configuration	PH3135-90S.jpg
2000/08/07	UF2815B	Buy	1 RF Power MOSFET Transistor 15W, 100-500 MHz, 28V	100	500	28	15	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2815B.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Capacitances for Broadband Operations DMOS Structure 100 MHz to 500 MHz Operation RoHS Compliant Low Noise Floor Common Source Configuration	UF2815B.JPG
2000/07/30	PH1090-175L	Buy	Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty	1030	1090	45	175	8.3	55	Bipolar	Flange Ceramic Pkg	Flange Mount	PH1090-175L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon MicrowavePower Transistor RoHS Compliant Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package	PH1090-175L.JPG
2000/07/27	PH2226-110M	Buy	Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M	2250	2550	36	110	7.4	40	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2226-110M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching	PH2226-110M.jpg
2000/07/27	DU28120V	Buy	RF Power MOSFET Transistor 120W, 2-175MHz, 28V	2	175	28	120	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU28120V.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Figure than Bipolar Devices High Saturate Output Power Lower Capacitances for Broadband Operation DMOS structure	RF PT SI - DU28120V.JPG
2000/07/26	PH2729-110M	Buy	Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty	2700	2900	36	110	6.8	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2729-110M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold metallization system Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH2729-110M.jpg
2000/07/26	UF2805B	Buy	1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V	100	500	28	5	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2805B.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device 100 MHz to 500 MHz Operation Lower Noise Floor Common Source Configuration Lower Capacitances for Broadband Operation DMOS Structure	UF2805B.JPG
2000/07/26	UF2840P	Buy	RF Power MOSFET Transistor 40W, 100-500 MHz, 28V	100	500	28	40	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2840P.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Floor Common Source Configuration Lower Capacitances for Broadband Operation DMOS Structure	UF2840P.JPG
2000/07/26	PH2729-25M	Buy	Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty	2700	2900	36	25	9.2	45	Bipolar	Flange Ceramic Pkg	Flange Mount	PH2729-25M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Gold Metallization System Internal Input and Output Impedance Matching Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Hermetic Metal/Ceramic Package	PH2729-25M.JPG
2000/07/26	PH2731-5M	Buy	Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty	2700	3100	36	5	7	30	Bipolar	Flange Ceramic Pkg	Flange Mount	PH2731-5M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Internal Input and Output Impedance Matching RoHS Compliant Hermetic Metal/Ceramic Package	PH2731-5M.JPG
2000/07/23	DU2805S	Buy	RF Power MOSFET Transistor 5W, 2-175MHz, 28V	2	175	28	5	11	55	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2805S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel enhancement mode device Lower noise figure than bipolar devices High saturated output power Lower capacitances for broadband operation DMOS structure	RF PT- SI _ DU2805S.JPG
2000/07/23	DU2820S	Buy	RF Power MOSFET Transistor 200W, 2-175MHz, 28V	2	175	28	20	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2820S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Figure than Bipolar Devices High Saturate Output Power Lower Capacitances for Broadband Operation DMOS structure	RF PT- SI DU2820S.JPG
2000/07/23	PH2731-20M	Buy	Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty	2700	3100	36	20	8.2	45	Bipolar	Flange Ceramic Pkg	Flange Mount	PH2731-20M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH2731-20M.JPG
2000/07/21	PH3135-20M	Buy	Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty	3100	3500	36	20	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3135-20M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistors Broadband Class C Operation Common Base Configuration	PH3135-20M.JPG
2000/07/21	DU28200M	Buy	RF Power MOSFET Transistor 200W, 2-175MHz, 28V	2	175	28	200	13	55	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU28200M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Figure than Bipolar Devices High Saturate Output Power Lower Capacitances for Broadband Operation DMOS structure	RF PT- SI _ DU28200M.JPG
2000/07/21	PH2731-75L	Buy	Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty	2700	3100	36	75	7.45	38	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH2731-75L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH2731-75L.JPG
2000/07/20	PH1090-75L	Buy	Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty	1030	1090	45	75	9	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1090-75L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1090-75L.JPG
2000/07/21	PH1214-220M	Buy	Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	40	220	7.4	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-220M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration Gold Metallization System InternalInput and Output Impedance Matching	PH1214-220M.jpg
2000/07/21	UF2810P	Buy	RF Power MOSFET Transistor 10W, 100-500 MHz, 28V	100	500	28	10	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2810P.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel enhancement mode device 100 MHz to 500 MHz operation Lower noise floor Common source configuration Lower capacitances for broadband operation DMOS structure	MACOM_general.png
2000/07/20	UF2840G	Buy	RF Power MOSFET Transistor 5W, 100-500 MHz, 28V	100	500	28	40	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2840G.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device 100 MHz to 500 MHz Operation Lower Noise Floor Lower Capacitances for Broadband Operation DMOS Structure Common Source Configuration	UF2840G.JPG
2000/07/21	PH1090-350L	Buy	Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty	1090	1090	45	350	8	55	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1090-350L.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors Common Base Configuration RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistor High Efficiency Inter-Digitized Geometry Broadband Class C operation	PH1090-350L.jpg
2000/07/20	UF28100M	Buy	RF Power MOSFET Transistor 100W, 100-500 MHz, 28V	100	500	28	100	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF28100M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device RoHS Compliant Lower Noise Figure than Competitive Devices High Saturated Output Power Lower Capacitances for Broadband Operation DMOS Structure	UF28100M.JPG
2000/07/21	UF2820P	Buy	RF Power MOSFET Transistor 20W, 100-500 MHz, 28V	100	500	28	20	10	50	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF2820P.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device Lower Noise Floor Common Source Configuration Lower Capacitances for Broadband Operation DMOS Structure	UF2820P.JPG
2000/07/20	UF28100V	Buy	RF Power MOSFET Transistor 100W, 100-500 MHz, 28V	100	500	28	100	10	50	DMOS	Flange Ceramic Pkg	Flange Mount	UF28100V.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-channel Enhancement Mode Device High Saturated Output Power Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices DMOS Structure Lower Noise Figure than Competitive Devices	UF28100V.JPG
2000/07/19	UF28150J	Buy	RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V	100	500	28	150	8	55	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	UF28150J.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	DMOS Structure Common Source Configuration Lower Capacitance for Broadband Operation	UF28150J.JPG
2000/07/19	PH1214-40M	Buy	Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty	1200	1400	40	40	8.5	50	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH1214-40M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System Diffused Emitter Ballasting Resistors High Efficiency Inter-Digitized Geometry Broadband Class C Operation Common Base Configuration	PH1214-40M.JPG
2000/07/18	DU2840S	Buy	RF Power MOSFET Transistor 40W, 2-175MHz, 28V	2	175	28	40	13	60	DMOS	Flange Ceramic Pkg	CeramicFlange Mount	DU2840S.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel enhancement mode device Lower noise figure than bipolar devices High saturated output power Lower capacitances for broadband operation DMOS structure	MACOM_general.png
2000/07/19	DU2860U	Buy	RF Power MOSFET Transistor 60W, 2-175MHz, 28V	2	175	28	60	13	60	DMOS	Flange Ceramic Pkg	Ceramic Flange Mount	DU2860U.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	N-Channel Enhancement Mode Device High Saturate Output Power Lower Capacitances for Broadband Operation DMOS Structure Lower Noise Figure than Bipolar Devices	RF PT- SI _ DU2860U.JPG
	PHA3135-130M	Buy	Pulsed Power Pallet	3100	3500	36	130	7.4	35	Pallet	Pallet	Pallet	PHA3135-130M.pdf	Yes		NPN Silicon Bipolar Transistor Plated Copper Flange Easily Combined for High Power Transmitters Duroid Circuit Board Input and Output Matched to 50O		10	100
2017/05/01	PHA2731-190M	Buy	Radar Pulsed Power Amplifier	2700	3100		190	7.5	33	Pallet	Pallet	Pallet	PHA2731-190M.pdf	Yes				10	200
2018/06/05	MRF448A	Buy	The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V	1	30	50	250	12	45	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	MRF448A.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45% 100% tested for Load Mismatch at all Phase Angels with 3:1 VSWR Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)	MRF448.png
2000/10/22	PH3135-65M	Buy	Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty	3100	3500		65	7.5	35	Bipolar	Flange Ceramic Pkg	Ceramic Flange Mount	PH3135-65M.pdf	Yes	AN3009 - S-Parameter S2P File Format Guide AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola) AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola) AN3025 - Transistor Mounting and Soldering AN4002 - Recommendations For Long-Term Transistor Storage AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)	NPN Silicon Microwave Power Transistors RoHS Compliant Hermetic Metal/Ceramic Package Internal Input and Output Impedance Matching Gold Metallization System High Efficiency Inter-Digitized Geometry Diffused Emitter Ballasting Resistor Broadband Class C Operation Common Base Configuration	PH3135-65M.jpg

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