Indium Phosphide (InP)

InP Lasers Diodes using MACOM’s proprietary Etched Facet Technology (EFT)

• Scalable: InP wafers are available with diameters up to 4 inches, leading to a large number of devices obtained from each wafer.
• High Speed: 25Gbps+ data rates are possible with directly modulated lasers based on InP wafers.
• Reliable: A large variety of semiconductor crystals can be deposited on an InP wafer, allowing fabrication of highly reliable devices over wide temperatures.
• Versatile: InP’s low refractive index enables its use as the cladding for laser waveguides.
• Optimal:  InP is a direct bandgap material that enables the fabrication of single or integrated devices that absorb or emit at 1310 and 1550 nm, the two optimum wavelengths in the optical spectrum for fiber communications.
• Future applications: InP is the preferred material to build laser sources for emerging silicon photonics products.

Optoelectronic products such as Laser and Modulator Drivers in InP HBT Technology

• High gain designs in small area enabling single die solutions instead of using multiple dies.
• High breakdown voltage compared to Si/Ge allows higher output capability
• High ft/fmax allows for operation upto 45Gbs
• Good linearity and noise performance.

• Silicon Photonics
• Data Centers
• Mobile Backhaul
• Access Networks
• Metro Markets

• 100G and 400G Coherent Networks
• Metro Networks
• Data Centers