New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
| Part Number | Description |
|---|---|
| MAPC-A1508 | GaN Amplifier 50 V, 700 W 900 - 930 MHz |
| MADP-04001B-1458WN | Isolated Stud PIN Diode |
| MAAP-011388-DIE | E-Band Power Amplifier |
| MAAV-011019-Q1225T | Quad PIN Diode π Attenuator |
| MACP-011099 | Coupler, 14.5 dB |
| MAAL-011186-DIE | Low Noise Amplifier 20 - 55 GHz |
| MATA-38834 | Octal 26 to 56 GBaud Linear Transimpedance Amplifier |
| MATA-38836 | Octal 26 to 56 GBaud Linear Transimpedance Amplifier |
| MAOD-127D16I-LCT2 | DFB Edge-emitting lasers for Datacom and Telecom |
| MAOD-131D16I-LCT2 | DFB Edge-emitting lasers for Datacom and Telecom |
| MAOD-133D16I-LCT2 | DFB Edge-emitting lasers for Datacom and Telecom |
| MAOD-127D10I-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-129D10I-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-131D10I-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-133D10I-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-127D10G-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-129D10G-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-131D10G-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAOD-133D10G-LCT2 | DFB Edge-Emitting Lasers for Datacom and Telecom |
| MAAM-011324 | Driver Amplifier |
| MADL-011092 | Wide Band Surface Mount Limiter |
| MAPC-A1522 | GaN Amplifier 65 V, 1 kW |
| MAPC-A1513 | GaN Amplifier 52 V, 450 W |
| MAMX-011116 | Image-Reject Mixer 32 - 37 GHz |
| MASW-011207 | SPDT High Isolation Switch 1 - 3000 MHz |
| MAMF-011170 | Integrated Switch and LNA Module 2 - 5 GHz |
| MASW-011191 | High Power SPDT Reflective Switch, 10 W |
| MASW-011185 | SP3T AlGaAs PIN Diode Switch |
| MAAM-011252-CQ3 | Broadband Low Noise Gain Block 0.03 - 8 GHz |
| MAXP-21181 | 3.2 Gbps 16 x 16 Non-Blocking Crosspoint Switch |
| MAXP-21182 | 3.2 Gbps 8 x 24 Non-Blocking Crosspoint Switch |
| MAXP-21183 | 3.2 Gbps 24 x 8 Non-Blocking Crosspoint Switch |
| MAXP-21184 | 3.2 Gbps 10 x 22 Non-Blocking Crosspoint Switch |
| MAXP-21186 | 3.2 Gbps 12 x 20 Non-Blocking Crosspoint Switch |
| MAOM-002422-DIE | Quad Channel 28 Gbps Direct Modulated Laser Driver IC |
| MAOM-005320-DIE | Single Channel 56 Gbps Direct Modulated Laser Driver IC |
| MAOM-005420-DIE | Quad Channel 56 Gbps Direct Modulated Laser Driver IC |
| MAOM-012408 | Quad Channel 128 GBaud Linear Open Collector Modulator Driver |
| MATA-012803 | 128 GBaud Dual Channel Linear TIA for 800G Coherent Receivers |
| MATA-012403 | 128 GBaud Quad Channel Linear TIA for 800G Coherent Receivers |
| MAOM-005808 | 53 Gbaud Octal Linear Differential Modulator Driver |
| MAOD-1xxD25G-LCT8 | 56G DFB lasers for 200GBASE-CWDM4 PAM4 |
| MAOD-1xxD25I-LCT8 | 56G DFB lasers for 200GBASE-CWDM4 PAM4 |
| MAOD-29xD25B-LCT5 | 25 Gbps DFB Edge-emitting lasers for 5G Fronthaul DWDM16 |
| MAFL-011126-DIE | Equalizer, 6 dB 20 GHz |
| MAFL-011127-DIE | Equalizer, 9 dB 20 GHz |
| MAFL-011128-DIE | Equalizer, 12 dB 20 GHz |
| MALD-38482 | Quad 26GBaud PAM4/NRZ VCSEL Driver |
| MAMX-011097 | 2 mm Image-Reject Mixer 32 - 37 GHz |
| MAPC-A1502 | GaN Amplifier 50 V, 1250 W 400 - 460 MHz - MACOM PURE CARBIDE |
| MAPC-A1602 | GaN Amplifier 130 V, 2500 W 960 - 1215 MHz - MACOM PURE CARBIDE |
| MADL-011100 | High Peak Power Surface Mount Limiter 2 - 20 GHz |
| MAPC-A1506 | GaN Amplifier 52 V, 450 W 2.0 - 2.4 GHz - MACOM PURE CARBIDE |
| MAAL-011146 | Dual Low Noise Amplifier 17.25 - 21.50 GHz |
| MAAM-011270 | RF Driver Amplifier, 0.5 W 250 - 4000 MHz |
| MAPC-A2021 | GaN Amplifier 32 V, 8 W 1.8 - 2.7 GHz - MACOM PURE CARBIDE |
| MAAL-011198 | Low Noise Amplifier 32 - 37 GHz |
| MAAL-011216 | Two-Stage Low Noise Amplifier 1.8 - 4.2 GHz |
| MAAD-011049 | Digital Attenuator, 2 dB LSB, 4-Bit 30 dB, DC - 55 GHz |
| MAAD-011061 | Digital Attenuator, 0.5 dB LSB, 6-Bit, Consistent Phase 31.5 dB, DC - 26.5 GHz |
| MADP-04P604-1079T | MELF PIN Diode |
| MAAL-011158-DIE | Low Phase Noise Amplifier 2 - 28 GHz |
| MAAL-011159-DIE | Low Phase Noise Amplifier 2 - 27 GHz |
| MAAD-011048 | Digital Attenuator, 1 dB LSB, 5-Bit 31 dB, DC - 55 GHz |
| MASW-011196 | High Power Reflective SPDT PIN Diode Switch 6 - 20 GHz |
| MADP-009989-1443W0 | Fast Non-Magnetic Anti-Parallel Protection Diodes |
| MA4PK6000-1252SK | 6000 V Stacked PIN Diode Chip |
| MAOM-005408-DIE | 53 Gbaud Quad Channel Linear Differential Modulator Driver |
| MAOM-003408 | Quad-Channel 32 GB MZM Limiting Driver |
| MAOM-003409 | Quad-Channel 32 GB MZM Limiting Driver |
| MAOM-012409 | Quad Channel 128 Gbaud Linear Open Collector Modulator Driver Die |
| MAOM-012404 | Quad Channel 128 Gbaud Linear MZM Driver Die |
| MARP-BA56 | Backside Avalanche Photodiode 56 GBaud |
| MADP-047600-14320T | MELF Glass Packaged PIN Diode |
| MAOD-127D10x-LCT5 | 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field |
| MAOD-127D10x-LCT6 | 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field |
| MADP-07001B-1458WN | Isolated Stud PIN Diode |
| MADP-007320-0DIEWN | Diode, PIN, DIE |
| MALD-38029 | 58Gbps PAM4 Dual CDRs with Integrated VCSEL Driver and Receiver with FFE |
| MALD-38030 | 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE |
| MALD-38032 | 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE |
| MAOM-005429 | Quad Channel 53 Gbaud Linear Differential Open Collector Modulator Driver |
| MAFL-011127 | Equalizer, 9 dB 20 GHz |
| MAFL-011126 | Equalizer, 6 dB 20 GHz |
| MAFL-011128 | Equalizer, 12 dB 20 GHz |
| MATA-40736 | Quad Linear 227Gbps PAM4 Transimpedance Amplifier |
| CGY2731UH | Gain Block 12 - 15 GHz |
| CGY2141UH | High Gain Broadband Amplifier |
| CGY2394SUH | 6 - 18 GHz 1 BIT TRUE TIME DELAY |
| CGY2393SUH | 6 - 18 GHz 5 BIT TRUE TIME DELAY |
| CGY2180UH | Double Balanced Mixer |
| CGY2181UH | Double Balanced Mixer |
| CGY2182UH | Double Balanced Mixer |
| CGY2183UH | Active Double Balanced Mixer |
| CGY2144UH | Medium Gain Broadband Amplifier DC - 54 GHz |
| CGY2184UH | Active Double Balanced Mixer |
| CGY2460UH | Ultra Low Noise Down Converter |
| CGY2470UH | Active Up Mixer |
| CGY2890SUH | Switch SPDT 6 - 18 GHz |
| CGY2471UH | Passive Down Converter Mixer |
| CGY2169UH | Attenuator, 6-Bit, 10 - 18 GHz |
| CGY2390SUH | Attenuator, 3-Bit |
| CGY2176AUH | Attenuator, 6-Bit |
| CGY2145UH | Low Noise, Wide Band Amplifier |
| CGY2160UH | Wideband Amplifier 1.5 - 47 GHz |
| CGY2171XBUH | Attenuator, 6-Bit |
| CGY2172XAUH | Phase Shifter, X-Band, 6-Bit |
| CGY2172XBUH | Phase Shifter, X-Band, 6-Bit |
| CGY2173UH | Phase Shifter, 6-Bit |
| CGY2174UH | Phase Shifter, 6-Bit |
| CGY2135UH | Power Amplifier, 33 dBm |
| CGY2177AUH | Phase Shifter, 6-Bit |
| CGY2392SHV | Phase Shifter, 6-Bit |
| CGY2392SUH | Phase Shifter, 6-Bit |
| CGY2170YHV | 6-Bit, X-Band Core Chip |
| CGY2170YUH | 6-Bit, X-Band Core Chip |
| CGY2105XHV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2175AHV | 3-Port, C-Band Integrated Core Chip |
| CGY2106XHV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2107HV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2108GS | Low Noise, High Gain, High IP3 Amplifier |
| CGY2175AUH | 3-Port, 6-Bits, C-Band Integrated Core Chip |
| CGY2108HV | Dual High Gain, Low Noise, High IP3 Amplifier |
| CGY2121XUH | Ultra Low Noise Amplifier |
| CGY2330UH | 6-Bit, Ku-Band Core Chip |
| CGY2122XUH | Ultra Low Noise Amplifier |
| CGY2350UH | 5-Bit, Ka-Band Core Chip |
| CGY2124UH | X-Band Low Noise Amplifier |
| CGY2125AUH | Low Noise Amplifier |
| CGY2351UH | Ka-Band Core Chip |
| CGY2128UH | Low Noise Amplifier, Ka-Band |
| CGY2178UH | High Gain, Low Noise Amplifier, C-Band |
| CGY2179HV | 4-Bit, Ku-Band Core Chip |
| CGY2190UH | Low Noise Amplifier, W-Band |
| CGY2220UH | Low Noise Amplifier |
| CGY2179UH | 4-Bit, Ku-Band Core Chip |
| CGY2221HV | Low Noise Amplifier, X-Band |
| CGY2221UH | Low Noise Amplifier, X-Band |
| CGY2230UH | Low Noise Amplifier |
| CGY2260UH | Low Noise Amplifier, Ka-Band |
| CGY2272UH | Low Noise Amplifier |
| CGY2290SUH | Low Noise Amplifier |
| CGY2120XUH | Low Noise Amplifier |
| CGY2232UH | Low Noise Amplifier |
| MABA-011157 | 1:1 Flux Coupled UnUn |
| MADP-047668-1134B0 | Dual Pair Anti-Parallel Low Magnetic PIN Diode |
| MAXP-23170 | 14 Gbps 288x288 Crosspoint Switch & Signal Conditioner |
| MACP-011097 | 90° Hybrid Coupler |
| MAPC-A1519 | GaN Amplifier 50 V, 200 W |
| MAAL-011161-DIE | Low Phase Noise Amplifier |
| MAPC-A2519 | GaN Amplifier 50 V, 90 W AVG |
| MABT-011001 | Bias Tee, 30MHz-45GHz, 4mm, SMD |
| MAAL-011134-CQ3 | Low Noise Amplifier |
| MAPC-A2503 | GaN Amplifier 50 V, 60 W AVG |
| MAPC-A2004-B | GaN Amplifier 50 V, 90 W |
| CGY2102UH | Transimpedance Amplifier, 2.5 Gb/s |
| MAPC-A1516 | GaN Amplifier 50 V, 500 W |
| CGY2110UH | Transimpedance Amplifier, 10 Gb/s |
| CGY2116UH | Transimpedance Amplifier, Low Noise, 10.7 Gb/s |
| MADP-011169 | PIN Diode |
| MAPD-011078 | 3-Way Power Divider |
| MADP-011180-10910T | MELF PIN Diode |
| MASW-011127 | High Power High Linearity SP4T Switch |
| MAAM-011357 | 20 dB Gain Amplifier |
| MAMF-011153 | Integrated High Power Switch and LNA Module |
| MAMF-011152 | Integrated High Power Switch and LNA Module |
| MAAL-011228 | 3T Low Noise Low Input Impedance Pre-Amplifier |
| MAAP-011361 | Power Amplifier, 4 W |
| MAAP-011362 | Power Amplifier, 2 W |
| MAAV-011018 | Voltage Variable Attenuator, 31 dB |
| MADL-04L062-1088 | Silicon Limiter Diode |
| MASW-011174 | AlGaAs SP3T Switch with Integrated Bias Network |
| MAAM-011338 | LO Buffer Amplifier |
| MALD-39437 | Quad 53GBaud PAM4/NRZ VCSEL Driver |
| MAOD-1xxD50x-LCT8 | DFB Edge-Emitting Lasers for 5G Fronthaul 50 Gbps |
| MADS-011068-1440WR | Silicon Schottky Ring Quad Chip Low Barrier |
| MAPC-A2520 | GaN Amplifier 50 V, 30 W AVG |
| MACP-011109 | Coupler, 16 dB |
| MACP-011102 | Coupler, 9 dB |
| MAAL-011227 | 1.5T Low Noise Low Input Impedance Pre-Amplifier |
| MAPC-P1028 | GaN Amplifier Pallet, 95 V, 2.3 kW |
| MAPC-A1511 | GaN Amplifier 100 V, 3000 W |
| MAAM-011323 | Driver Amplifier |
| MAAM-011322 | Driver Amplifier |
| MAFL-011125 | Equalizer, 4.5 dB |
| MAFL-011125-DIE | Equalizer, 4.5 dB |
| MAFL-011124 | Equalizer, 3 dB |
| MAFL-011124-DIE | Equalizer, 3 dB |
| MAFL-011156 | Equalizer, 0 dB |
| MAFL-011156-DIE | Equalizer, 0 dB, DIE |
| MAVR-011051 | GaAs Hyperabrubt Varactor Diode |
| MA4PKST6000 | KILOVOLT Series 6000 V PIN Diode |
| MADP-047668-1441BN | Dual Pair Anti-Parallel Low Magnetic PIN Diode |
| MAAL-011158 | Low Phase Noise Amplifier 2 - 30 GHz |
| MADP-011165-Q1279T | Surface Mount Plastic PIN Diode |
| MAMF-011183 | Ka-Band High Power Terminated SPDT PIN Switch with Integrated Driver, 20 - 44 GHz |
| MASW-011206 | AlGaAs SP2T Switch with Integrated Bias Network |
| MAMX-011126 | Double-Balanced Mixer |
| MADL-011108 | Diode Limiter |
| MAMF-011180 | High Power Switch with Integrated Bias Controller |
| MAAL-011243 | Two-stage Low Noise Amplifier with Bypass |
| MAMF-011184 | Integrated Switch and LNA Module |
| MAAV-011017 | Voltage Variable Attenuator, 32 dB Range |
| MAAL-011161 | Low Phase Noise Amplifier |
| MAAP-011377-DIE | Power Amplifier, 0.25 W |
| MAAL-011159 | Low Phase Noise Amplifier 2 - 27 GHz |
| MKVC-0547R0-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
| MKVC-050100-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
| MATE-10010A | 100G NRZ/PAM4 Optical Clock Recovery Module |
| MATE-10020A | 100G NRZ/PAM4 Optical Clock Recovery Module |
| MAPC-A2025 | GaN Amplifier 32 V, 8 W |
| GTRA214602FC | High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz |
| GTRA263902FC-V2 | High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
| GTRA184602FC-V1 | High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz |
| GTRA262802FC | High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
| GTRA364002FC | High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
| GTRA412852FC-V1 | High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz |
| GTRB097152FC | High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz |
| GTRA374902FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz |
| GTRA384802FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz |
| GTRB384608FC-V1 | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz |
| GTRB246608FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz |
| GTRB267008FC-V1 | High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
| GTRA362802FC-V1 | High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz |
| GTRB204402FC | High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz |
| GTRB264318FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz |
| GTRB266502FC-V1 | High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz |
| GTRB206002FC | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz |
| GTRB224402FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
| PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
| GTRB226002FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
| GTRA362002FC-V1 | High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
| GTRB186002FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
| GTVA212701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz |
| GTRB266908FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
| GTVA262711FA | High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz |
| GTRB424908FC | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz |
| GTVA220701FA | High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz |
| PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
| PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
| GTVA261701FA-V1 | High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz |
| GTVA263202FC-V1 | High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz |
| PTVA082407NF | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
| PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
| PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
| PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
| PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
| PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
| PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
| WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |