New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
Part Number | Description |
---|---|
MAOD-1xxD50x-LCT8 | DFB Edge-Emitting Lasers for 5G Fronthaul 50 Gbps |
MADS-011068-1440WR | Silicon Schottky Ring Quad Chip Low Barrier |
MAPC-A2520 | GaN Amplifier 50 V, 30 W AVG |
MACP-011109 | Coupler, 16 dB |
MACP-011102 | Coupler, 9 dB |
MAAL-011227 | 1.5T Low Noise Low Input Impedance Pre-Amplifier |
MAPC-P1028 | GaN Amplifier Pallet, 95 V, 2.3 kW |
MAPC-A1511 | GaN Amplifier 100 V, 3000 W |
MAAM-011323 | Driver Amplifier |
MAAM-011322 | Driver Amplifier |
MAFL-011125 | Equalizer, 4.5 dB |
MAFL-011125-DIE | Equalizer, 4.5 dB |
MAFL-011124 | Equalizer, 3 dB |
MAFL-011124-DIE | Equalizer, 3 dB |
MAFL-011156 | Equalizer, 0 dB |
MAFL-011156-DIE | Equalizer, 0 dB, DIE |
MAVR-011051 | GaAs Hyperabrubt Varactor Diode |
MA4PKST6000 | KILOVOLT Series 6000 V PIN Diode |
MADP-047668-1441BN | Dual Pair Anti-Parallel Low Magnetic PIN Diode |
MAAL-011158 | Low Phase Noise Amplifier 2 - 30 GHz |
MADP-011165-Q1279T | Surface Mount Plastic PIN Diode |
MAMF-011183 | Ka-Band High Power Terminated SPDT PIN Switch with Integrated Driver, 20 - 44 GHz |
MASW-011206 | AlGaAs SP2T Switch with Integrated Bias Network |
MAMX-011126 | Double-Balanced Mixer |
MADL-011108 | 4W Peak Power PIN Limiter, 18-40GHz |
MAMF-011180 | High Power Switch with Integrated Bias Controller |
MAAL-011243 | Two-stage Low Noise Amplifier with Bypass |
MAMF-011184 | Integrated Switch and LNA Module |
MAAV-011017 | Voltage Variable Attenuator, 32 dB Range |
MAAL-011161 | Low Phase Noise Amplifier |
MAAP-011377-DIE | Power Amplifier, 0.25 W |
MAAL-011159 | Low Phase Noise Amplifier 2 - 27 GHz |
MKVC-0547R0-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
MKVC-050100-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
MATE-10010A | 100G NRZ/PAM4 Optical Clock Recovery Module |
MATE-10020A | 100G NRZ/PAM4 Optical Clock Recovery Module |
MAPC-A2025 | GaN Amplifier 32 V, 8 W |
GTRA214602FC | High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz |
GTRA263902FC-V2 | High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
GTRA184602FC-V1 | High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz |
GTRA262802FC | High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
GTRA364002FC | High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
GTRA412852FC-V1 | High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz |
GTRB097152FC | High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz |
GTRA374902FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz |
GTRA384802FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz |
GTRB384608FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz |
GTRB246608FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz |
GTRB267008FC-V1 | High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
GTRA362802FC-V1 | High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz |
GTRB204402FC | High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz |
GTRB264318FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz |
GTRB266502FC | High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz |
GTRB206002FC | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz |
GTRB224402FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
GTRB226002FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
GTRA362002FC-V1 | High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
GTRB186002FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
GTVA212701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz |
GTRB266908FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
GTVA262711FA | High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz |
GTRB424908FC | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz |
GTVA220701FA | High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz |
PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
GTVA261701FA-V1 | High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz |
GTVA263202FC-V1 | High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz |
PTVA082407NF | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
WS1A3940-V1-R3K | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz |
PTRA084858NF-V1 | High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz |
PXFC191507FC-V1 | High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
PTRA097008NB-V1 | High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz |
PTVA084007NF | High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
PTRA093818NF-V1 | High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz |
WS1A3640 | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz |
PXAD214218FV-V1 | High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
PXAE183708NB | High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
PTNC210604MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz |
GTVA261802FC-V1 | High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz |
PXAE261908NF-V1 | High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
PTRA097058NB-V1 | High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
GTVA262701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz |
WSGPA01-V1-R3K | 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
PXAE263708NB-V1 | High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
PTRA084808NF-V1 | High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz |
PXAE213708NB | High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
GTRB184402FC | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz |
CGH40045 | 45 W RF Power GaN HEMT |
CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
CG2H40025 | 25 W RF Power GaN HEMT |
CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
CGH27030 | 30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
CGH40035 | 35 W RF Power GaN HEMT |
CGH40006 | 6 W RF Power GaN HEMT |
CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
CG2H40120 | 120 W; RF Power GaN HEMT |
CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
CGHV14500 | 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
CG2H40010 | 10 W RF Power GaN HEMT |
CGHV14250 | 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems |
CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |
CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |
CG2H40045 | 45 W RF Power GaN HEMT |
CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
CGH31240F | 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems |
CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
CGH40120 | 120 W RF Power GaN HEMT |
CGH35015 | 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX |
CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
CGH35060P1 | 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX |
CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
CGH40010 | 10 W RF Power GaN HEMT |
CGHV40180 | 180 W; DC - 2 GHz; GaN HEMT |
CGH27015P | 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
CGHV31500 | 500W, 2.7 - 3.1 GHz, GaN IMFET |
CGHV1A250 | 8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor |
CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
CGH35240 | 240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems |
CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
CMPA0530002 | 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications |
CMPA1F1H060 | 15.4 - 17.7 GHz, 80 W GaN MMIC HPA |
CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
CMPA5259050 | 50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
CG2H40035 | 35 W RF Power GaN HEMT |
CMPA2738060 | 80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier |
GTVA10700 | High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz |
CMPA9396025 | 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier |
CMPA601J025 | 6 - 18 GHz, 25W GaN MMIC HPA |
CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
CGHV96050F2 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT |
CGHV50200 | 200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
CMPA2735015 | 15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
GTVA12600 | High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz |
CMPA1E1F060 | 13.75 - 15.5 GHz, 60W GaN MMIC HPA |
CGH40180 | 180 W RF Power GaN HEMT |
CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
CGHV96130F | 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications |
CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
CGHV96100 | 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier |
CGHV96050F1 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT |
CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
CMPA1C1D080 | 90 W; 12.75 - 13.25 GHz; GaN MMIC; Power Amplifier |
CMPA2735030 | 30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
GTVA101K4 | High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz |
CGH25120F | 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE |
CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
CMPA901A035 | 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers |
CGHV14800 | 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
CGHV37400F | 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
CMPA1D1J001 | 12.7 - 18 GHz, 1W GaN MMIC HPA |
CMPA5259025 | 40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
CGH40090 | 90 W RF Power GaN HEMT |
CMPA851A012 | 8.5 - 10.5 GHz, 20 W GaN MMIC HPA |
CGHV35060MP | 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations |
CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CMPA2560025 | 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier |
CGHV38375F | 2.75 - 3.75, 400W GaN on SiC HPA |
CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
CMPA1D1E030 | 30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier |
CMPA5259080 | High power C-band MMIC for pulsed radar operation. |
CMPA3135060S | 3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier |
CMPA601C025 | 40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
CGH35060P2 | 60 W; 3100 - 3500 MHz; 28 V GaN HEMT |
CGHV35120F | 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems |
CMPA851A050 | 8.5 - 10.5 GHz GaN MMIC HPA |
CMPA2735075 | 75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
CMPA2935150 | 150W; 2.9 - 3.5 GHz; GaN MMIC |
CGH40025 | 25 W RF Power GaN HEMT |
CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
WST33H0NC | 2.4 - 2.5 GHz, 300W GaN Transistor |
CMPA901A020 | 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier |
CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
CMPA851A025 | 8.5 - 10.5 GHz, 40 W GaN MMIC HPA |
CMPA1C1D060D | 60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier |
CMPA1H1J050 | 17.3 - 18.4 GHz, 60W GaN MMIC HPA |
CMPA0560008 | MMIC Power Amplifier, 10 W, 0.5 - 6 GHz |
CGH55015 | 10 W; C - band; Unmatched; GaN HEMT |
CMPA0760020 | 0.7 - 6.0 GHz, 25W GaN MMIC HPA |
CGHV35400 | 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
CGHV40200 | 200 W RF Power GaN HEMT |
CMPA1D1E025 | 25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier |
CGHV35150 | 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems |
CMPA851A005S | 8.5 - 10.5 GHz, 4.5W GaN MMIC HPA |
CMPA1842040 | 1.8 - 4.2 GHz, 45 W GaN MMIC HPA |
CMPA5585030 | 30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier |
CMPA2060035 | 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier |
CMPA5259100 | 5.0 - 5.9 GHz, 100W GaN MMIC HPA |
CGHV59070 | 70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems |
CMPA801B030 | 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier |
CGHV59350 | 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
CGH09120F | 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM |
MAPC-A1521 | GaN Amplifier 50 V, 150 W |
MACP-011108 | Coupler, 17.3 dB |
MADS-011082-12790T | Surface Mount Zero Bias Schottky Diode |
MAPC-A1524 | GaN Amplifier 45 V, 400 W |
MACP-011096 | Bi-Directional Coupler |
MACP-011113 | Directional Coupler |
MASW-011226 | SP4T Absorptive Switch |
MAAP-011379 | Power Amplifier, 1 W |
MAPC-A1106 | GaN Amplifier 50 V, 85 W |
MAAM-011361 | High Gain High Linearity 0.5 W Driver Amplifier |
MAAM-011302 | High Gain High Linearity 0.5 W Driver Amplifier |
MABA-011160 | 1:2 Transmission Line Balun |
MAAP-011307-DIE | High Linearity Distributed Power Amplifier |
MAAP-011378-DIE | Power Amplifier, 0.5 W |
MACP-011079 | Coupler, 8 dB |
MAAP-011379-DIE | Power Amplifier, 1 W |
MAPC-A1600 | GaN Amplifier 160 V, 150 W - MACOM PURE CARBIDE |
MAAP-011377 | Power Amplifier, 0.25 W |
MAAP-011378 | Power Amplifier, 0.5 W |
GTVB222611FAV1A | High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz |
MACP-011114 | Coupler, 7 dB |
MARP-PT12G | PT-12G Photoreceiver |
MACP-011118 | Coupler, 17.3 dB 5 - 1800 MHz |
MAAP-011410-DIE | 10W, Ka Band Power Amplifier |
MAAP-011422-DIE | 10W, Ka Band Power Amplifier |
MAAP-011413-DIE | 10W, Ka Band Power Amplifier |
MAAL-011250-DIE | X–Band, High Input Power, GaN Low Noise Amplifier |
MAAL-011251-DIE | GaN Low Noise Amplifier |
MACP-011117 | Coupler, 8 dB |
MASW-011208 | High Power Reflective SP3T Surface Mount Switch |
MASW-011209 | High Power Reflective SP2T Surface Mount Switch |
MASW-011201 | Switch, SP4T, 50 W |
MAMX-011144 | Double-Balanced Mixer |
GTRB266702FCV1A | High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz |
MADL-011122-DIE | Diode Limiter |
MABT-011011 | Bias Tee 0.03 - 67 GHz, 4mm SMD |
WGC18630 | Thermally Enhanced GaN Amplifier 48 V, 610 W |
WGC27630 | Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz |
MAPC-A1001 | GaN Amplifier 50 V, 50 W |
WGC40680V1A | Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz |
MAPC-C22440 | Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz |
MADL-011115 | Diode Limiter |
MAAM-011337 | LO Buffer Amplifier |
MAAP-011307 | High Linearity Distributed Power Amplifier |
MA4P4006-1041 | PIN Diode |
MADL-011116 | Diode Limiter |
MAAP-011325 | Power Amplifier, 0.25 W |
MAEQ-40904 | Quad Channel 227Gbps Linear Equalizer |
MAEQ-40914 | Quad Channel 227Gbps PAM-4 Linear Equalizer |
GTRB097152NCV1A | Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz |
MATA-39224 | Dual Linear 112Gbps PAM4 Transimpedance Amplifier |
MALD-39225 | Dual 53GBaud PAM4/NRZ VCSEL Driver |
MASW-011186-Q | SPDT Reflective Switch |
MKVC-0547R0 -14460T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
MKVC-050100-14460T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
WSDC2640-V1 | Thermally Enhanced GaN on SiC Ampl |
WSGPC01-V1 | Thermally Enhanced GaN on SiC Ampl |
WGC27550V1A | Thermally Enhanced GaN on SiC Amplifier |
MAEQ-39908 | Eight Channel 56GBaud (112Gbps) PAM-4 Linear Equalizer |
WGC20630-V1A | Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz |
WGC22630 | Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz |
MLP7131-2012 | Surface Mount Limiter PIN Diode |
MACP-011119 | 12 dB Coupler, 5 - 1800 MHz |
MAXP-37170F | 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner |
MAXP-37605A | 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner |
MACP-011083 | Coupler, 12.7 dB 5 - 1800 MHz |
MADL-011121 | High Peak Power Surface Mount Limiter2 - 18 GHz |
MAPC-A1529 | GaN Amplifier 100 V, 1450 W Rev. V2P 3 - 700 MHz |
MAAP-011423-DIE | 7.5W, Power Amplifier 37 - 43 GHz |
WSM5100S | 8.5 - 10.5 GHz, 16W GaN T/R Module |
CMPA2060040D1 | GaN High Power Amplifier, 40 W 2.0 -6.0 GHz |
MAPC-P1040 | GaN Amplifier Pallet 50 V, 300 W 2400 - 2500 MHz |
MAAL-011245-DIE | Low Noise Amplifier 27 - 31.5 GHz |
MAAL-011246-DIE | Low Noise Amplifier 22 - 48 GHz |
MAAP-011420-DIE | 1 W High Performance GaN Travelling Wave Amplifier MMIC |
MADP-011184 | PIN Diode |
WGC26420 | Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz |
WST4050D | GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz |
WST4100D | GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz |
WST4200D | GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz |
MAPD-011059 | 3-Way Power Divider 5 - 1800 MHz |
MAAL-011234 | Low Noise, Low Input Impedance Pre-Amplifier 1.5T and 3T Applications |
MAPC-A3005 | GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz |
MAPC-A3006 | GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz |
MAPC-A3007 | GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz |
MAPC-A3009 | GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz |
MKVC-050100-13920T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
MKVC-0547R0-13920T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
MAAL-011258 | Low Noise Amplifier, 13 to 15 GHz |
MAAL-011222 | Low Noise Amplifier with Bypass, 650 to 4200 MHz |
MAAL-011287 | Low Noise Amplifier with Bypass, 1400 to 6000 MHz |
MAAL-011229 | Low Noise Amplifier, 17 to 55 GHz |
MADL-011126-DIE | Diode Limiter, 2 to 40 GHz |
MADL-011125-DIE | Diode Limiter, 2 to 20 GHz |