New Products Listing

Below is the list of products released in the last year to MACOM’s already extensive portfolio.

Part Number Description
MAOD-127D10x-LCT5 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field
MAOD-127D10x-LCT6 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field
MADP-07001B-1458WN Isolated Stud PIN Diode
MADP-007320-0DIEWN Diode, PIN, DIE
MALD-38029 58Gbps PAM4 Dual CDRs with Integrated VCSEL Driver and Receiver with FFE
MALD-38030 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE
MALD-38032 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE
MAOM-005429 Quad Channel 53 Gbaud Linear Differential Open Collector Modulator Driver
MAFL-011127 Equalizer, 9 dB 20 GHz
MAFL-011126 Equalizer, 6 dB 20 GHz
MAFL-011128 Equalizer, 12 dB 20 GHz
MATA-40734 Quad Linear 227Gbps PAM4 Transimpedance Amplifier
MATA-40736 Quad Linear 227Gbps PAM4 Transimpedance Amplifier
CGY2731UH Gain Block 12 - 15 GHz
CGY2141UH High Gain Broadband Amplifier
CGY2394SUH 6 - 18 GHz 1 BIT TRUE TIME DELAY
CGY2393SUH 6 - 18 GHz 5 BIT TRUE TIME DELAY
CGY2180UH Double Balanced Mixer
CGY2181UH Double Balanced Mixer
CGY2182UH Double Balanced Mixer
CGY2183UH Active Double Balanced Mixer
CGY2144UH Medium Gain Broadband Amplifier DC - 54 GHz
CGY2184UH Active Double Balanced Mixer
CGY2890SUH Switch SPDT 6 - 18 GHz
CGY2169UH Attenuator, 6-Bit, 10 - 18 GHz
CGY2390SUH Attenuator, 3-Bit
CGY2176AUH Attenuator, 6-Bit
CGY2145UH Low Noise, Wide Band Amplifier
CGY2160UH Wideband Amplifier 1.5 - 47 GHz
CGY2171XBUH Attenuator, 6-Bit
CGY2172XAUH Phase Shifter, X-Band, 6-Bit
CGY2172XBUH Phase Shifter, X-Band, 6-Bit
CGY2173UH Phase Shifter, 6-Bit
CGY2174UH Phase Shifter, 6-Bit
CGY2135UH Power Amplifier, 33 dBm
CGY2177AUH Phase Shifter, 6-Bit
CGY2392SHV Phase Shifter, 6-Bit
CGY2392SUH Phase Shifter, 6-Bit
CGY2170YHV 6-Bit, X-Band Core Chip
CGY2170YUH 6-Bit, X-Band Core Chip
CGY2105XHV Dual Ultra Low Noise, High IP3 Amplifier
CGY2175AHV 3-Port, C-Band Integrated Core Chip
CGY2106XHV Dual Ultra Low Noise, High IP3 Amplifier
CGY2107HV Dual Ultra Low Noise, High IP3 Amplifier
CGY2108GS Low Noise, High Gain, High IP3 Amplifier
CGY2175AUH 3-Port, 6-Bits, C-Band Integrated Core Chip
CGY2108HV Dual High Gain, Low Noise, High IP3 Amplifier
CGY2121XUH Ultra Low Noise Amplifier
CGY2330UH 6-Bit, Ku-Band Core Chip
CGY2122XUH Ultra Low Noise Amplifier
CGY2350UH 5-Bit, Ka-Band Core Chip
CGY2124UH X-Band Low Noise Amplifier
CGY2125AUH Low Noise Amplifier
CGY2351UH Ka-Band Core Chip
CGY2128UH Low Noise Amplifier, Ka-Band
CGY2178UH High Gain, Low Noise Amplifier, C-Band
CGY2179HV 4-Bit, Ku-Band Core Chip
CGY2190UH Low Noise Amplifier, W-Band
CGY2220UH Low Noise Amplifier
CGY2179UH 4-Bit, Ku-Band Core Chip
CGY2221HV Low Noise Amplifier, X-Band
CGY2221UH Low Noise Amplifier, X-Band
CGY2230UH Low Noise Amplifier
CGY2260UH Low Noise Amplifier, Ka-Band
CGY2272UH Low Noise Amplifier
CGY2290SUH Low Noise Amplifier
CGY2120XUH Low Noise Amplifier
CGY2232UH Low Noise Amplifier
MABA-011157 1:1 Flux Coupled UnUn
MADP-047668-1134B0 Dual Pair Anti-Parallel Low Magnetic PIN Diode
MAXP-23170 14 Gbps 288x288 Crosspoint Switch & Signal Conditioner
MACP-011097 90° Hybrid Coupler
MAPC-A1519 GaN Amplifier 50 V, 200 W
MAAL-011161-DIE Low Phase Noise Amplifier
MAPC-A2519 GaN Amplifier 50 V, 90 W AVG
MABT-011001 Bias Tee, 30MHz-45GHz, 4mm, SMD
MAAL-011134-CQ3 Low Noise Amplifier
MAPC-A2503 GaN Amplifier 50 V, 60 W AVG
MAPC-A2004-B GaN Amplifier 50 V, 90 W
CGY2102UH Transimpedance Amplifier, 2.5 Gb/s
MAPC-A1516 GaN Amplifier 50 V, 500 W
CGY2110UH Transimpedance Amplifier, 10 Gb/s
CGY2116UH Transimpedance Amplifier, Low Noise, 10.7 Gb/s
MADP-011169 PIN Diode
MAPD-011078 3-Way Power Divider
MADP-011180-10910T MELF PIN Diode
MASW-011127 High Power High Linearity SP4T Switch
MAAM-011357 20 dB Gain Amplifier
MAMF-011153 Integrated High Power Switch and LNA Module
MAMF-011152 Integrated High Power Switch and LNA Module
MAAL-011228 3T Low Noise Low Input Impedance Pre-Amplifier
MAAP-011361 Power Amplifier, 4 W
MAAP-011362 Power Amplifier, 2 W
MAAV-011018 Voltage Variable Attenuator, 31 dB
MADL-04L062-1088 Silicon Limiter Diode
MASW-011174 AlGaAs SP3T Switch with Integrated Bias Network
MAAM-011338 LO Buffer Amplifier
MALD-39437 Quad 53GBaud PAM4/NRZ VCSEL Driver
MAOD-1xxD50x-LCT8 DFB Edge-Emitting Lasers for 5G Fronthaul 50 Gbps
MADS-011068-1440WR Silicon Schottky Ring Quad Chip Low Barrier
MAPC-A2520 GaN Amplifier 50 V, 30 W AVG
MACP-011109 Coupler, 16 dB
MACP-011102 Coupler, 9 dB
MAAL-011227 1.5T Low Noise Low Input Impedance Pre-Amplifier
MAPC-P1028 GaN Amplifier Pallet, 95 V, 2.3 kW
MAPC-A1511 GaN Amplifier 100 V, 3000 W
MAAM-011323 Driver Amplifier
MAAM-011322 Driver Amplifier
MAFL-011125 Equalizer, 4.5 dB
MAFL-011125-DIE Equalizer, 4.5 dB
MAFL-011124 Equalizer, 3 dB
MAFL-011124-DIE Equalizer, 3 dB
MAFL-011156 Equalizer, 0 dB
MAFL-011156-DIE Equalizer, 0 dB, DIE
MAVR-011051 GaAs Hyperabrubt Varactor Diode
MA4PKST6000 KILOVOLT Series 6000 V PIN Diode
MADP-047668-1441BN Dual Pair Anti-Parallel Low Magnetic PIN Diode
MAAL-011158 Low Phase Noise Amplifier 2 - 30 GHz
MADP-011165-Q1279T Surface Mount Plastic PIN Diode
MAMF-011183 Ka-Band High Power Terminated SPDT PIN Switch with Integrated Driver, 20 - 44 GHz
MASW-011206 AlGaAs SP2T Switch with Integrated Bias Network
MAMX-011126 Double-Balanced Mixer
MADL-011108 4W Peak Power PIN Limiter, 18-40GHz
MAMF-011180 High Power Switch with Integrated Bias Controller
MAAL-011243 Two-stage Low Noise Amplifier with Bypass
MAMF-011184 Integrated Switch and LNA Module
MAAV-011017 Voltage Variable Attenuator, 32 dB Range
MAAL-011161 Low Phase Noise Amplifier
MAAP-011377-DIE Power Amplifier, 0.25 W
MAAL-011159 Low Phase Noise Amplifier 2 - 27 GHz
MKVC-0547R0-1453 Si Hi Q Capacitors 50 V MACOM KV CAPS™
MKVC-050100-1453 Si Hi Q Capacitors 50 V MACOM KV CAPS™
MATE-10010A 100G NRZ/PAM4 Optical Clock Recovery Module
MATE-10020A 100G NRZ/PAM4 Optical Clock Recovery Module
MAPC-A2025 GaN Amplifier 32 V, 8 W
GTRA214602FC High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
GTRA263902FC-V2 High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
GTRA184602FC-V1 High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz
GTRA262802FC High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
GTRA364002FC High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
GTRA412852FC-V1 High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
GTRB097152FC High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz
GTRA374902FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
GTRA384802FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
GTRB384608FC-V1 High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz
GTRB246608FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz
GTRB267008FC-V1 High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
GTRA362802FC-V1 High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
GTRB204402FC High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz
GTRB264318FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
GTRB266502FC-V1 High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
GTRB206002FC High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
GTRB224402FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz
PTMC210404MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz
GTRB226002FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz
GTRA362002FC-V1 High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
GTRB186002FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
GTVA212701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
GTRB266908FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz
GTVA262711FA High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz
GTRB424908FC High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz
GTVA220701FA High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
PXAD184218FV-V1 High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz
PTRA094808NF-V1 High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz
GTVA261701FA-V1 High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
GTVA263202FC-V1 High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz
PTVA082407NF High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz
PTGA090304MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz
PTRA082808NF-V1 High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz
PTRA083818NF-V1 High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz
PTVA092407NF-V2 High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz
PTRA095908NB-V1 High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
PTRA087008NB-V1 High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz
WS1A2639-V1-R3K 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
WS1A3940-V1-R3K 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz
PTRA084858NF-V1 High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz
PXFC191507FC-V1 High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
PTRA097008NB-V1 High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
PTVA084007NF High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz
PTRA093818NF-V1 High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz
WS1A3640 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
PXAD214218FV-V1 High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz
PXAE183708NB High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz
PTNC210604MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz
GTVA261802FC-V1 High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
PXAE261908NF-V1 High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz
PTRA097058NB-V1 High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
GTVA262701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
WSGPA01-V1-R3K 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
PXAE263708NB-V1 High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz
PTRA084808NF-V1 High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz
PXAE213708NB High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
GTRB184402FC High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz
CGH40045 45 W RF Power GaN HEMT
CGH55030 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX
CG2H40025 25 W RF Power GaN HEMT
CGH27060F 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
CG2H30070 70 W; 0.5 - 3.0 GHz; GaN HEMT
CGH27030 30 W, DC - 6.0 GHz, 28 V, GaN HEMT
CGH40035 35 W RF Power GaN HEMT
CGH40006 6 W RF Power GaN HEMT
CGH60060D-GP4 60 W; 6.0 GHz; GaN HEMT Die
CG2H40120 120 W; RF Power GaN HEMT
CGH60008D-GP4 8 W; 6.0 GHz; GaN HEMT Die
CGHV1F025 25 W; DC - 15 GHz; 40 V; GaN HEMT
CGHV14500 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
CG2H40010 10 W RF Power GaN HEMT
CGHV14250 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
CGHV1F006 6 W; DC - 15.0 GHz; 40 V; GaN HEMT
CG2H80060D-GP4 60 W; 8.0 GHz; GaN HEMT Die
CG2H40045 45 W RF Power GaN HEMT
CGH60015D-GP4 15 W; 6.0 GHz; GaN HEMT Die
CG2H80045D-GP4 45 W, 8.0 GHz, GaN HEMT Die
CGH31240F 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems
CG2H80015D-GP4 15 W; 8.0 GHz ; GaN HEMT Die
CGH40120 120 W RF Power GaN HEMT
CGH35015 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX
CGH21240 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
CGH35060P1 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX
CGHV1J006D-GP4 6 W; 18.0 GHz; GaN HEMT Die
CGH40010 10 W RF Power GaN HEMT
CGHV40180 180 W; DC - 2 GHz; GaN HEMT
CGH27015P 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
CGHV1J070D-GP4 70 W; 18.0 GHz; GaN HEMT Die