New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
| Part Number | Description |
|---|---|
| MAOD-127D10x-LCT5 | 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field |
| MAOD-127D10x-LCT6 | 1270 nm High Power Edge-emitting DFB Laser Chip 10 Gbps with Narrow Far Field |
| MADP-07001B-1458WN | Isolated Stud PIN Diode |
| MADP-007320-0DIEWN | Diode, PIN, DIE |
| MALD-38029 | 58Gbps PAM4 Dual CDRs with Integrated VCSEL Driver and Receiver with FFE |
| MALD-38030 | 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE |
| MALD-38032 | 58Gbps PAM4 Dual CDRs with Integrated Laser Driver and Receiver with FFE |
| MAOM-005429 | Quad Channel 53 Gbaud Linear Differential Open Collector Modulator Driver |
| MAFL-011127 | Equalizer, 9 dB 20 GHz |
| MAFL-011126 | Equalizer, 6 dB 20 GHz |
| MAFL-011128 | Equalizer, 12 dB 20 GHz |
| MATA-40734 | Quad Linear 227Gbps PAM4 Transimpedance Amplifier |
| MATA-40736 | Quad Linear 227Gbps PAM4 Transimpedance Amplifier |
| CGY2731UH | Gain Block 12 - 15 GHz |
| CGY2141UH | High Gain Broadband Amplifier |
| CGY2394SUH | 6 - 18 GHz 1 BIT TRUE TIME DELAY |
| CGY2393SUH | 6 - 18 GHz 5 BIT TRUE TIME DELAY |
| CGY2180UH | Double Balanced Mixer |
| CGY2181UH | Double Balanced Mixer |
| CGY2182UH | Double Balanced Mixer |
| CGY2183UH | Active Double Balanced Mixer |
| CGY2144UH | Medium Gain Broadband Amplifier DC - 54 GHz |
| CGY2184UH | Active Double Balanced Mixer |
| CGY2890SUH | Switch SPDT 6 - 18 GHz |
| CGY2169UH | Attenuator, 6-Bit, 10 - 18 GHz |
| CGY2390SUH | Attenuator, 3-Bit |
| CGY2176AUH | Attenuator, 6-Bit |
| CGY2145UH | Low Noise, Wide Band Amplifier |
| CGY2160UH | Wideband Amplifier 1.5 - 47 GHz |
| CGY2171XBUH | Attenuator, 6-Bit |
| CGY2172XAUH | Phase Shifter, X-Band, 6-Bit |
| CGY2172XBUH | Phase Shifter, X-Band, 6-Bit |
| CGY2173UH | Phase Shifter, 6-Bit |
| CGY2174UH | Phase Shifter, 6-Bit |
| CGY2135UH | Power Amplifier, 33 dBm |
| CGY2177AUH | Phase Shifter, 6-Bit |
| CGY2392SHV | Phase Shifter, 6-Bit |
| CGY2392SUH | Phase Shifter, 6-Bit |
| CGY2170YHV | 6-Bit, X-Band Core Chip |
| CGY2170YUH | 6-Bit, X-Band Core Chip |
| CGY2105XHV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2175AHV | 3-Port, C-Band Integrated Core Chip |
| CGY2106XHV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2107HV | Dual Ultra Low Noise, High IP3 Amplifier |
| CGY2108GS | Low Noise, High Gain, High IP3 Amplifier |
| CGY2175AUH | 3-Port, 6-Bits, C-Band Integrated Core Chip |
| CGY2108HV | Dual High Gain, Low Noise, High IP3 Amplifier |
| CGY2121XUH | Ultra Low Noise Amplifier |
| CGY2330UH | 6-Bit, Ku-Band Core Chip |
| CGY2122XUH | Ultra Low Noise Amplifier |
| CGY2350UH | 5-Bit, Ka-Band Core Chip |
| CGY2124UH | X-Band Low Noise Amplifier |
| CGY2125AUH | Low Noise Amplifier |
| CGY2351UH | Ka-Band Core Chip |
| CGY2128UH | Low Noise Amplifier, Ka-Band |
| CGY2178UH | High Gain, Low Noise Amplifier, C-Band |
| CGY2179HV | 4-Bit, Ku-Band Core Chip |
| CGY2190UH | Low Noise Amplifier, W-Band |
| CGY2220UH | Low Noise Amplifier |
| CGY2179UH | 4-Bit, Ku-Band Core Chip |
| CGY2221HV | Low Noise Amplifier, X-Band |
| CGY2221UH | Low Noise Amplifier, X-Band |
| CGY2230UH | Low Noise Amplifier |
| CGY2260UH | Low Noise Amplifier, Ka-Band |
| CGY2272UH | Low Noise Amplifier |
| CGY2290SUH | Low Noise Amplifier |
| CGY2120XUH | Low Noise Amplifier |
| CGY2232UH | Low Noise Amplifier |
| MABA-011157 | 1:1 Flux Coupled UnUn |
| MADP-047668-1134B0 | Dual Pair Anti-Parallel Low Magnetic PIN Diode |
| MAXP-23170 | 14 Gbps 288x288 Crosspoint Switch & Signal Conditioner |
| MACP-011097 | 90° Hybrid Coupler |
| MAPC-A1519 | GaN Amplifier 50 V, 200 W |
| MAAL-011161-DIE | Low Phase Noise Amplifier |
| MAPC-A2519 | GaN Amplifier 50 V, 90 W AVG |
| MABT-011001 | Bias Tee, 30MHz-45GHz, 4mm, SMD |
| MAAL-011134-CQ3 | Low Noise Amplifier |
| MAPC-A2503 | GaN Amplifier 50 V, 60 W AVG |
| MAPC-A2004-B | GaN Amplifier 50 V, 90 W |
| CGY2102UH | Transimpedance Amplifier, 2.5 Gb/s |
| MAPC-A1516 | GaN Amplifier 50 V, 500 W |
| CGY2110UH | Transimpedance Amplifier, 10 Gb/s |
| CGY2116UH | Transimpedance Amplifier, Low Noise, 10.7 Gb/s |
| MADP-011169 | PIN Diode |
| MAPD-011078 | 3-Way Power Divider |
| MADP-011180-10910T | MELF PIN Diode |
| MASW-011127 | High Power High Linearity SP4T Switch |
| MAAM-011357 | 20 dB Gain Amplifier |
| MAMF-011153 | Integrated High Power Switch and LNA Module |
| MAMF-011152 | Integrated High Power Switch and LNA Module |
| MAAL-011228 | 3T Low Noise Low Input Impedance Pre-Amplifier |
| MAAP-011361 | Power Amplifier, 4 W |
| MAAP-011362 | Power Amplifier, 2 W |
| MAAV-011018 | Voltage Variable Attenuator, 31 dB |
| MADL-04L062-1088 | Silicon Limiter Diode |
| MASW-011174 | AlGaAs SP3T Switch with Integrated Bias Network |
| MAAM-011338 | LO Buffer Amplifier |
| MALD-39437 | Quad 53GBaud PAM4/NRZ VCSEL Driver |
| MAOD-1xxD50x-LCT8 | DFB Edge-Emitting Lasers for 5G Fronthaul 50 Gbps |
| MADS-011068-1440WR | Silicon Schottky Ring Quad Chip Low Barrier |
| MAPC-A2520 | GaN Amplifier 50 V, 30 W AVG |
| MACP-011109 | Coupler, 16 dB |
| MACP-011102 | Coupler, 9 dB |
| MAAL-011227 | 1.5T Low Noise Low Input Impedance Pre-Amplifier |
| MAPC-P1028 | GaN Amplifier Pallet, 95 V, 2.3 kW |
| MAPC-A1511 | GaN Amplifier 100 V, 3000 W |
| MAAM-011323 | Driver Amplifier |
| MAAM-011322 | Driver Amplifier |
| MAFL-011125 | Equalizer, 4.5 dB |
| MAFL-011125-DIE | Equalizer, 4.5 dB |
| MAFL-011124 | Equalizer, 3 dB |
| MAFL-011124-DIE | Equalizer, 3 dB |
| MAFL-011156 | Equalizer, 0 dB |
| MAFL-011156-DIE | Equalizer, 0 dB, DIE |
| MAVR-011051 | GaAs Hyperabrubt Varactor Diode |
| MA4PKST6000 | KILOVOLT Series 6000 V PIN Diode |
| MADP-047668-1441BN | Dual Pair Anti-Parallel Low Magnetic PIN Diode |
| MAAL-011158 | Low Phase Noise Amplifier 2 - 30 GHz |
| MADP-011165-Q1279T | Surface Mount Plastic PIN Diode |
| MAMF-011183 | Ka-Band High Power Terminated SPDT PIN Switch with Integrated Driver, 20 - 44 GHz |
| MASW-011206 | AlGaAs SP2T Switch with Integrated Bias Network |
| MAMX-011126 | Double-Balanced Mixer |
| MADL-011108 | 4W Peak Power PIN Limiter, 18-40GHz |
| MAMF-011180 | High Power Switch with Integrated Bias Controller |
| MAAL-011243 | Two-stage Low Noise Amplifier with Bypass |
| MAMF-011184 | Integrated Switch and LNA Module |
| MAAV-011017 | Voltage Variable Attenuator, 32 dB Range |
| MAAL-011161 | Low Phase Noise Amplifier |
| MAAP-011377-DIE | Power Amplifier, 0.25 W |
| MAAL-011159 | Low Phase Noise Amplifier 2 - 27 GHz |
| MKVC-0547R0-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
| MKVC-050100-1453 | Si Hi Q Capacitors 50 V MACOM KV CAPS™ |
| MATE-10010A | 100G NRZ/PAM4 Optical Clock Recovery Module |
| MATE-10020A | 100G NRZ/PAM4 Optical Clock Recovery Module |
| MAPC-A2025 | GaN Amplifier 32 V, 8 W |
| GTRA214602FC | High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz |
| GTRA263902FC-V2 | High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
| GTRA184602FC-V1 | High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz |
| GTRA262802FC | High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
| GTRA364002FC | High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
| GTRA412852FC-V1 | High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz |
| GTRB097152FC | High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz |
| GTRA374902FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz |
| GTRA384802FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz |
| GTRB384608FC-V1 | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 3300 - 3800 MHz |
| GTRB246608FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz |
| GTRB267008FC-V1 | High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
| GTRA362802FC-V1 | High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz |
| GTRB204402FC | High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz |
| GTRB264318FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz |
| GTRB266502FC-V1 | High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz |
| GTRB206002FC | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz |
| GTRB224402FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
| PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
| GTRB226002FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
| GTRA362002FC-V1 | High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
| GTRB186002FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
| GTVA212701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz |
| GTRB266908FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
| GTVA262711FA | High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz |
| GTRB424908FC | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz |
| GTVA220701FA | High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz |
| PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
| PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
| GTVA261701FA-V1 | High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz |
| GTVA263202FC-V1 | High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz |
| PTVA082407NF | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
| PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
| PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
| PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
| PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
| PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
| PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
| WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
| WS1A3940-V1-R3K | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz |
| PTRA084858NF-V1 | High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz |
| PXFC191507FC-V1 | High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
| PTRA097008NB-V1 | High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz |
| PTVA084007NF | High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
| PTRA093818NF-V1 | High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz |
| WS1A3640 | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz |
| PXAD214218FV-V1 | High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
| PXAE183708NB | High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
| PTNC210604MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz |
| GTVA261802FC-V1 | High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz |
| PXAE261908NF-V1 | High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
| PTRA097058NB-V1 | High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
| GTVA262701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz |
| WSGPA01-V1-R3K | 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
| PXAE263708NB-V1 | High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
| PTRA084808NF-V1 | High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz |
| PXAE213708NB | High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
| GTRB184402FC | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz |
| CGH40045 | 45 W RF Power GaN HEMT |
| CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
| CG2H40025 | 25 W RF Power GaN HEMT |
| CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
| CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
| CGH27030 | 30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
| CGH40035 | 35 W RF Power GaN HEMT |
| CGH40006 | 6 W RF Power GaN HEMT |
| CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
| CG2H40120 | 120 W; RF Power GaN HEMT |
| CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
| CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
| CGHV14500 | 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
| CG2H40010 | 10 W RF Power GaN HEMT |
| CGHV14250 | 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems |
| CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |
| CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |
| CG2H40045 | 45 W RF Power GaN HEMT |
| CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
| CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
| CGH31240F | 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems |
| CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
| CGH40120 | 120 W RF Power GaN HEMT |
| CGH35015 | 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX |
| CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
| CGH35060P1 | 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX |
| CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
| CGH40010 | 10 W RF Power GaN HEMT |
| CGHV40180 | 180 W; DC - 2 GHz; GaN HEMT |
| CGH27015P | 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
| CGHV31500 | 500W, 2.7 - 3.1 GHz, GaN IMFET |
| CGHV1A250 | 8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor |
| CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
| CGH35240 | 240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems |
| CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
| CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
| CMPA0530002 | 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications |
| CMPA1F1H060 | 15.4 - 17.7 GHz, 80 W GaN MMIC HPA |
| CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
| CMPA5259050 | 50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CG2H40035 | 35 W RF Power GaN HEMT |
| CMPA2738060 | 80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier |
| GTVA10700 | High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz |
| CMPA9396025 | 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier |
| CMPA601J025 | 6 - 18 GHz, 25W GaN MMIC HPA |
| CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
| CGHV96050F2 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT |
| CGHV50200 | 200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
| CMPA2735015 | 15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
| GTVA12600 | High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz |
| CMPA1E1F060 | 13.75 - 15.5 GHz, 60W GaN MMIC HPA |
| CGH40180 | 180 W RF Power GaN HEMT |
| CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
| CGHV96130F | 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications |
| CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
| CGHV96100 | 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier |
| CGHV96050F1 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT |
| CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
| CMPA1C1D080 | 90 W; 12.75 - 13.25 GHz; GaN MMIC; Power Amplifier |
| CMPA2735030 | 30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
| GTVA101K4 | High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz |
| CGH25120F | 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE |
| CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
| CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
| CMPA901A035 | 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CGHV14800 | 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
| CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
| CGHV37400F | 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
| CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
| CMPA1D1J001 | 12.7 - 18 GHz, 1W GaN MMIC HPA |
| CMPA5259025 | 40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
| CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
| CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
| CGH40090 | 90 W RF Power GaN HEMT |
| CMPA851A012 | 8.5 - 10.5 GHz, 20 W GaN MMIC HPA |
| CGHV35060MP | 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations |
| CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| CMPA2560025 | 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier |
| CGHV38375F | 2.75 - 3.75, 400W GaN on SiC HPA |
| CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
| CMPA1D1E030 | 30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier |
| CMPA5259080 | High power C-band MMIC for pulsed radar operation. |
| CMPA3135060S | 3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier |
| CMPA601C025 | 25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
| CGH35060P2 | 60 W; 3100 - 3500 MHz; 28 V GaN HEMT |
| CGHV35120F | 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems |
| CMPA851A050 | 8.5 - 10.5 GHz GaN MMIC HPA |
| CMPA2735075 | 75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
| CMPA2935150 | 150W; 2.9 - 3.5 GHz; GaN MMIC |
| CGH40025 | 25 W RF Power GaN HEMT |
| CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
| WST33H0NC | 2.4 - 2.5 GHz, 300W GaN Transistor |
| CMPA901A020 | 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier |
| CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
| CMPA851A025 | 8.5 - 10.5 GHz, 40 W GaN MMIC HPA |
| CMPA1C1D060D | 60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier |
| CMPA1H1J050 | 17.3 - 18.4 GHz, 60W GaN MMIC HPA |
| CMPA0560008 | MMIC Power Amplifier, 10 W, 0.5 - 6 GHz |
| CGH55015 | 10 W; C - band; Unmatched; GaN HEMT |
| CMPA0760020 | 0.7 - 6.0 GHz, 25W GaN MMIC HPA |
| CGHV35400 | 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
| CGHV40200 | 200 W RF Power GaN HEMT |
| CMPA1D1E025 | 25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier |
| CGHV35150 | 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems |
| CMPA851A005S | 8.5 - 10.5 GHz, 4.5W GaN MMIC HPA |
| CMPA1842040 | 1.8 - 4.2 GHz, 45 W GaN MMIC HPA |
| CMPA5585030 | 30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier |
| CMPA2060035 | 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier |
| CMPA5259100 | 5.0 - 5.9 GHz, 100W GaN MMIC HPA |
| CGHV59070 | 70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems |
| CMPA801B030 | 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier |
| CGHV59350 | 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
| CGH09120F | 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM |
| MAPC-A1521 | GaN Amplifier 50 V, 150 W |
| MACP-011108 | Coupler, 17.3 dB |
| MADS-011082-12790T | Surface Mount Zero Bias Schottky Diode |
| MAPC-A1524 | GaN Amplifier 45 V, 400 W |
| MACP-011096 | Bi-Directional Coupler |
| MACP-011113 | Directional Coupler |
| MASW-011226 | SP4T Absorptive Switch |
| MAAP-011379 | Power Amplifier, 1 W |
| MAPC-A1106 | GaN Amplifier 50 V, 85 W |
| MAAM-011361 | High Gain High Linearity 0.5 W Driver Amplifier |
| MAAM-011302 | High Gain High Linearity 0.5 W Driver Amplifier |
| MABA-011160 | 1:2 Transmission Line Balun |
| MAAP-011307-DIE | High Linearity Distributed Power Amplifier |
| MAAP-011378-DIE | Power Amplifier, 0.5 W |
| MACP-011079 | Coupler, 8 dB |
| MAAP-011379-DIE | Power Amplifier, 1 W |
| MAPC-A1600 | GaN Amplifier 160 V, 150 W - MACOM PURE CARBIDE |
| MAAP-011377 | Power Amplifier, 0.25 W |
| MAAP-011378 | Power Amplifier, 0.5 W |
| GTVB222611FAV1A | High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz |
| MACP-011114 | Coupler, 7 dB |
| MARP-PT12G | PT-12G Photoreceiver |
| MACP-011118 | MACP-011118 |
| MAAP-011410-DIE | 10W, Ka Band Power Amplifier |
| MAAP-011422-DIE | 10W, Ka Band Power Amplifier |
| MAAP-011413-DIE | 10W, Ka Band Power Amplifier |
| MAAL-011250-DIE | X–Band, High Input Power, GaN Low Noise Amplifier |
| MAAL-011251-DIE | GaN Low Noise Amplifier |
| MACP-011117 | Coupler, 8 dB |
| MASW-011208 | High Power Reflective SP3T Surface Mount Switch |
| MASW-011209 | High Power Reflective SP2T Surface Mount Switch |
| MASW-011201 | Switch, SP4T, 50 W |
| MAMX-011144 | Double-Balanced Mixer |
| GTRB266702FCV1A | High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz |
| MADL-011122-DIE | Diode Limiter |
| MABT-011011 | Bias Tee |
| WGC18630 | Thermally Enhanced GaN Amplifier 48 V, 610 W |
| WGC27630 | Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz |
| MAPC-A1001 | GaN Amplifier 50 V, 50 W |
| WGC40680V1A | Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz |
| MAPC-C22440 | Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz |
| MADL-011115 | Diode Limiter |
| MAAM-011337 | LO Buffer Amplifier |
| MAAP-011307 | High Linearity Distributed Power Amplifier |
| MA4P4006-1041 | PIN Diode |
| MAAP-011325 | Power Amplifier, 0.25 W |
| MAEQ-40904 | Quad Channel 227Gbps Linear Equalizer |
| MAEQ-40914 | Four Channel 56GBaud (112Gbps) PAM-4 Linear Equalizer |
| GTRB097152NCV1A | Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz |
| MATA-39224 | Dual Linear 112Gbps PAM4 Transimpedance Amplifier |
| MALD-39225 | Dual 53GBaud PAM4/NRZ VCSEL Driver |
| MASW-011186-Q | SPDT Reflective Switch |
| WSDC2640-V1 | Thermally Enhanced GaN on SiC Ampl |
| WSGPC01-V1 | Thermally Enhanced GaN on SiC Ampl |
| WGC27550V1A | Thermally Enhanced GaN on SiC Amplifier |